High-energy electron-diffraction diagram processing system and method

A high-energy electron diffraction and image processing technology, applied in electrical digital data processing, chemical instruments and methods, and input/output process of data processing, etc. Effect

Inactive Publication Date: 2006-09-06
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0008] In the past, people usually observed the RHEED diffraction pattern with the naked eye, so it was very laborious and error-prone to observe. Although the diffraction information on the surface can be seen, it is impossible to calculate the growth rate
[0009] There is also a CCD camera placed behind the RHEED screen, and then the diffraction information is displayed on the TV. Although this method is more convenient for observation, it is also very difficult to calculate the growth rate
[0010] In order to calculate the growth rate, some people put the optical fiber behind the diffraction spots on the screen, but this method is not effective and the noise is very large
[0011] The above methods all have their own strengths, but none of them can save the image on the screen, so it cannot be analyzed after the material grows

Method used

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Embodiment Construction

[0035] see figure 2 , figure 2 It is a connection diagram of each component of the system. A high-energy electron diffraction image processing system of the present invention is characterized in that it includes:

[0036] A high-energy electron diffraction fluorescent screen 1;

[0037] A CCD camera 2, the CCD camera 2 is placed behind the high-energy electron diffraction fluorescent screen 1, and the CCD camera is fixed with a stainless steel cylinder;

[0038] An image acquisition card 4, the image acquisition card 4 is connected with the CCD camera 2 with the video line 3, and the image acquisition card 4 converts the analog signal obtained by the CCD camera 2 into a digital signal, and stores it in the memory;

[0039] A computer 5, the computer 5 is connected with the image acquisition card 4 with the video line 3, the computer 5 processes the data in the internal memory, and images the data on the screen of the computer 5.

[0040] 2. A high-energy electron diffract...

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Abstract

The system comprises: a HEEP fluorescent screen, a CCD cam behind the screen fixed by a stainless cylinder, an image acquisition card connected with the cam by a video line to convert the obtained analog signal into the digital signal and store in memory, and a computer with data to image the data on screen.

Description

technical field [0001] The method of the present invention is suitable for surface analysis using reflective high energy electron diffraction (RHEED, Reflective High Energy Electron Diffraction), especially in molecular beam epitaxy (MBE, Molecular Beam Epitaxy) equipment. Background technique [0002] Reflective high-energy electron diffraction is widely used in molecular beam epitaxy equipment. It is the most important in situ monitoring method in MBE. [0003] In the high-energy electron diffraction system, the high-energy electron beam (usually 14KV) is grazing the surface of the sample at a very small angle, and the incident angle is usually 1°-2°. Since the normal component of the incident electron beam is very small, the high-energy electron beam can only penetrate one or two atomic layers away from the sample surface, and the diffracted electron beam hits the phosphor screen to form a diffraction pattern. Since the high-energy electron beam can only penetrate the s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F3/05G06F3/14H01L21/20C30B19/00
Inventor 孙永伟侯识华宋国峰杨晓杰叶晓军
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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