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Glow organic electroluminescent device and manufacturing method thereof

An electroluminescence and device technology, which is applied in the field of red light organic electroluminescence devices and their manufacturing, can solve the problems of not being substantially improved, and achieve the effects of improving electroluminescence performance, high efficiency, and high color purity

Inactive Publication Date: 2004-11-17
CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It can be seen that although the color purity problem of single-doped red light devices can be solved by using the dual-doping method through waterfall energy transfer, it has not been substantially improved.

Method used

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  • Glow organic electroluminescent device and manufacturing method thereof
  • Glow organic electroluminescent device and manufacturing method thereof
  • Glow organic electroluminescent device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Doping of C545T and DCJTI to Alq 3 As the light-emitting layer, the structure is ITO / NPB / Alq 3 :C545T:DCJTI / Alq 3 / LiF / Al electroluminescent devices. at 10 -4 The organic and metal electrode layers are evaporated under a vacuum of Pa. The evaporation rate of the organic layer is controlled at 0.1-4 Å / s, the evaporation rate of LiF is controlled at 0.2 Å / s, and the evaporation rate of the metal is controlled at 5 Å / s. Alq 3 The doping concentration ratio of :C545T:DCJTI is controlled at 1:0.5%:2%. Among them, the thickness of the NPB layer is 50nm, the doped light-emitting layer is 30nm, Alq 3 The layer is 20nm, the LiF layer is 1nm, and the Al layer is 100nm. The obtained device is driven by DC voltage, and the red light emission of DCJTI can be obtained, the maximum power efficiency is 9.4lm / W, the maximum current efficiency is 11.2cd / A, and the maximum brightness can reach 29500cd / m 2 , the main peak of luminescence is 615nm. Under the same conditions, the maxi...

Embodiment 2

[0035] Doping of C545T and DCJTI to Alq 3 As the light-emitting layer, the structure is ITO / NPB / Alq 3 :C545T:DCJTI / Alq 3 / LiF / Al electroluminescent devices. at 10 -4 The organic and metal electrode layers are evaporated under a vacuum of Pa. The evaporation rate of the organic layer is controlled at 0.1-4 Å / s, the evaporation rate of LiF is controlled at 0.2 Å / s, and the evaporation rate of the metal is controlled at 5 Å / s. Alq 3 The doping concentration ratio of :C545T:DCJTI is controlled at 1:0.5%:1%. Among them, the thickness of the NPB layer is 50nm, the doped light-emitting layer is 30nm, Alq 3 The layer is 20nm, the LiF layer is 1nm, and the Al layer is 100nm. The obtained device is driven by DC voltage, and the red light emission of DCJTI can be obtained, the maximum power efficiency is 8.9lm / W, the maximum current efficiency is 12.6cd / A, and the maximum brightness can reach 33200cd / m 2 , the main peak of luminescence is 607nm. Under the same conditions, the max...

Embodiment 3

[0037] Doping of C545T and DCJTB into Alq 3 As the light-emitting layer, the structure is ITO / NPB / Alq 3 :C545T:DCJTB / Alq 3 / LiF / Al electroluminescent devices. at 10 -4 The organic and metal electrode layers are evaporated under a vacuum of Pa. The evaporation rate of the organic layer is controlled at 0.1-4 Å / s, the evaporation rate of LiF is controlled at 0.2 Å / s, and the evaporation rate of the metal is controlled at 5 Å / s. Alq 3 The doping concentration ratio of :C545T:DCJTB is controlled at 1:0.5%:0.5%. Among them, the thickness of the NPB layer is 50nm, the doped light-emitting layer is 30nm, Alq 3 The layer is 20nm, the LiF layer is 1nm, and the Al layer is 100nm. The obtained device is driven by DC voltage, and the red light emission of DCJTB can be obtained, the maximum power efficiency is 10.9lm / W, the maximum current efficiency is 11.7cd / A, and the maximum brightness can reach 23700cd / m 2 , the main peak of luminescence is 612nm. Under the same conditions, th...

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Abstract

The invention relate to red light organic electroluminescence device and its manufacture method. By intermingling fluorescence dye C545T(density: 0.2%-2%) which function as sensitizer and red light organic dye(density: 0.5%-5%) with 8- hydroxyl quinoline aluminium, electroluminescence device with a structure of IT0 / NPB / ALq3:C545T:red light dye / Alq3 / liF / Al can be produced. The device is driven by direct current, producing the luminescence of red light dye. Compared with the electroluminescence device without sensitizer C545Tú¼its luminescence efficiency and brightness has been improved markedly, thus commendably realizing red organic electroluminescence.

Description

technical field [0001] The invention belongs to a red light organic electroluminescent device and a manufacturing method thereof. Background technique [0002] With the rapid development of the electronic information industry, the display plays a vital role as an essential interface for human-computer interaction. The continuous progress of display technology and the continuous emergence of new technologies have driven the leapfrog development of the display industry. As a new generation of flat panel display technology - organic electroluminescent display device, due to its own characteristics, such as simple preparation process, low turn-on voltage, high brightness, high efficiency, fast response speed, active light emission, wide viewing angle, no radiation, easy to The realization of large flat surface, flexible bending and low price, etc., and the progress made in industrialization in recent years have brought unlimited business opportunities to the flat panel display ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05B33/10H05B33/14H05B33/20
Inventor 马东阁陈江山周全国陈振宇
Owner CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI
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