Metal filmtype pulse output type steel body elastic micro variable sensor and its measuring method

Abstract

The present invention relates to one sensor converting elastic micro variation of rigid body into electrical parameter variation. The sensor includes metal film type mechanical resonant follower, electronic resonant frequency selector, resonant driver and detection and shaping circuit. After the sensor is installed in the sampled part of detected metal rigid body, the detected metal rigid body is applied with some external force to produce micro elastic deformation and the elastic deformation is fed via the mechanical resonant follower, electronic resonant frequency selector and resonant driver to the detection and shaping circuit, so that the variation is measured. The sensor has simple structure and high sensitivity.

Description

technical field [0001] The invention relates to a sensor and its measurement method, in particular to a metal film pulse output type steel body elastic micro-variable sensor and its measurement method. Background technique [0002] The electrical symbol of the original traditional force-sensitive strain gauge sensor is "LR", which can be strictly defined as "semiconductor force-sensitive strain gauge steel elastic micro-variable sensor". This sensor belongs to the semiconductor device category and is a special A device used to measure the strain in an object. Because the object is subjected to the action of the external force, the corresponding deformation is generated, and the force-sensitive strain gauge sensor can indirectly measure the magnitude of the external force. [0003] The measurement principle of the force-sensitive strain gauge sensor is: the force-sensitive strain gauge sensor can be equivalent to a resistor. When the cross-sectional ar...

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Problems solved by technology

[0005] (1) The semiconductor force-sensitive strain gauge sensor is made of semiconductor silicon material, which has high sensitivity to its temperature, so it is not suitable for use in occasions where the temperature environment changes over a large span

[0006] (2) The semiconductor resistance strain gauge sensor is made of semiconductor silicon material and other materials, and its mechanical elastic life is limited

[0007] (3) Since the use of semiconductor resistance strain gauge sensors requires adhesives to firmly and tightly paste the semiconductor resistance strain gauges on the surface of the metal object to be detected, it is not suitable for use in non-damage detection

[0008] (4) When using a semiconductor resistance strain gauge sensor, it is necessary to use an adhesive to firmly and tightly paste the semiconductor resistance strain gauge on the surface of the metal object to be tested and sampled, which affects the detection accuracy and range to a certain extent

[0009] (5) The bonding process is complex, difficult and difficult to operate

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