Electric erasing programmable logic element
A programming logic and electric erasing technology, which is applied to electrical components, electrical solid-state devices, circuits, etc., can solve the problem of large area of single-layer polysilicon storage cells
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[0022] see figure 2 , figure 2 A front sectional view of an Electrically Erasable Programmable Logic Device (Electrically Erasable Programmable Logic Device) 50 of the present invention is shown in FIG. The electrically erasable programmable logic element 50 includes a P-type substrate (P-Type Substrate) 52; a first N-type ion-doped region 54, located in the P-type substrate 52; a first gate 56, which Located above the P-type substrate 52 and adjacent to the first N-type ion-doped region 54, and in a floating (Floating) state, used as a floating gate of the electrically erasable programmable logic element 50 to store The nonvolatile data of the electrically erasable programmable logic element 50; a second N-type ion-doped region 58a, located in the P-type substrate 52 and adjacent to the first grid 56; a third N-type The ion-doped region 58b is located in the P-type substrate 52 and is electrically connected to the second N-type ion-doped region 58b; a second gate 60, whic...
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