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Semi-conductor device

A semiconductor and conductive layer technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems such as the inability to obtain electromagnetic wave shielding effects, achieve good electromagnetic wave shielding effects, and prevent the reduction of magnetic force line density , The effect of suppressing the reduction of the magnetic line density

Inactive Publication Date: 2002-07-31
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since this structure has a large number of gaps at the electromagnetic wave shielding layer, sufficient electromagnetic wave shielding effect cannot be obtained.

Method used

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no. 1 approach

[0029] figure 1 (a) is a front view showing a first embodiment of the semiconductor device of the present invention; figure 1 (b) is figure 1 Sectional view at dashed line A-A in (a).

[0030] Such as figure 1 As shown in (a), the semiconductor device according to the first embodiment has a spiral inductor 20 having a spiral pattern formed in the same plane, and an electromagnetic wave shielding layer 60 . The electromagnetic wave shielding layer 60 has an opening 100 in a region corresponding to the region surrounded by the innermost circle of the spiral inductor 20 , and has a slit 120 extending from the opening to the peripheral portion of the electromagnetic wave shielding layer 60 .

[0031] Next, the configuration of each part will be described more specifically.

[0032] There is no particular restriction on the formation position of the spiral inductor, but it can be as figure 1 As shown in (b), for example, the same layer is formed at the position of the fir...

no. 2 approach

[0049] figure 2 (a) is a front view showing a second embodiment of the semiconductor device of the present invention; figure 2 (b) is figure 2 Sectional view at the dashed line B-B in (a).

[0050] As in the first embodiment, also in the second embodiment, the electromagnetic wave shielding layer has an opening in a region corresponding to the region surrounded by the innermost circle of the spiral inductor, and has openings extending from the opening to the A gap in the peripheral portion of the electromagnetic wave shielding layer. However, it is different from the first embodiment in that the electromagnetic wave shielding layer is formed under the spiral inductor.

[0051] Such as figure 2 As shown in (a) and 2(b), similarly to the first embodiment, the first wiring layer on the first interlayer insulating film 15 formed on the semiconductor substrate 10 is patterned to form a spiral pattern having a spiral shape. Figure 20 of the spiral inductor. The size and sh...

no. 3 approach

[0057] image 3 (a) is a front view showing a third embodiment of the semiconductor device of the present invention; image 3 (b) is image 3 Sectional view at dashed line C-C in (a).

[0058] Like the first and second embodiments, in the third embodiment, the electromagnetic wave shielding layer has an opening in a region corresponding to the region surrounded by the innermost circle of the spiral inductor, and has openings from the opening. A slit extending to the peripheral portion of the electromagnetic wave shielding layer. However, the electromagnetic wave shielding layer is formed above and below the spiral inductor, which is different from the first and second embodiments.

[0059] Such as image 3 As shown in (a) and 3(b), similarly to the first and second embodiments, the first wiring layer on the first interlayer insulating film 15 formed on the semiconductor substrate 10 is formed to have a spiral shape. The spiral inductor 20 of the spiral pattern. The size ...

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Abstract

The invention provides a semiconductor device provided with a spiral inductor and an electromagnetic wave shielding layer for demonstrating an excellent electromagnetic wave shielding effect without degrading a Q value. In the electromagnetic wave shielding layer arranged above or below the spiral inductor provided with a spiral pattern, an opening part in a magnetic flux passing area generated at the center of the spiral pattern by the spiral inductor and a slit from the opening part to a peripheral edge are formed.

Description

technical field [0001] The present invention relates to a semiconductor device, and more particularly to a semiconductor device having a spiral inductor and an electromagnetic wave shielding layer. Background technique [0002] Inductors are essential parts in analog circuits and RF (radio frequency) circuits, but recently, in order to reduce the number of parts, inductors are often formed in the form of thin films and mixed on the same substrate. [0003] As such a thin film inductor, for example, a planar spiral (swirl) pattern is formed on any wiring layer, or a three-dimensional coil is formed by combining a plurality of wiring layers with conductive plugs between the wiring layers. [0004] Among them, the so-called spiral inductor having a planar spiral pattern, since the inductor part is composed of one wiring layer, has a small number of necessary wiring layers including the lead-out electrode part, a simple structure, and fewer connecting parts, thereby reducing the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02H01F17/00H01F27/34H01L21/02H01L21/822H01L27/04H01L27/08H05K9/00
CPCH01L27/08H01L28/10H01F27/34H01F17/0006H01L27/02
Inventor 新津阳一郎
Owner KK TOSHIBA
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