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Gallium nitride base film epitaxial growth apparatus by metallorganics chemical gas phase deposition

A technology of chemical vapor deposition and metal organics, which is applied in the direction of gaseous chemical plating, metal material coating technology, electrical components, etc., can solve the problems of difficult processing, poor growth repeatability, uneven growth, etc., and achieve the solution of doping Uniformity and uniformity of growth, the effect of airflow stabilization

Inactive Publication Date: 2005-09-14
QINGDAO JASON ELECTRIC
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Problems solved by technology

[0004] The present invention provides a novel metal-organic compound chemical vapor deposition gallium nitride-based film epitaxial growth equipment, which can solve the problems of large waste of raw materials, uneven growth, high growth cost, high processing difficulty, and poor growth repeatability in the prior art. question

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  • Gallium nitride base film epitaxial growth apparatus by metallorganics chemical gas phase deposition
  • Gallium nitride base film epitaxial growth apparatus by metallorganics chemical gas phase deposition

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Embodiment Construction

[0016] see figure 1 , The invention is an innovative design of the reactor structure in the MOCVD GaN-based thin film epitaxial growth equipment. The reactor includes a top air chamber 1, a reaction chamber, a base of the reaction chamber and a transmission part.

[0017] Top air chamber: gas mixing chamber 1-6 and water cooling chamber 1-1, the top of water cooling chamber 1-1 is equipped with MO and NH 3 Gas inlet 1-2, 1-3, the water cavity of water cooling chamber 1-1 is around, and gas mixing chamber 1-6 is respectively provided with many tiny air inlet holes, air outlet holes 1-6-1 above and below, mixing The gas outlet hole 1-6-1 communicates with the inner cavity of the inner tube 25 of the reaction chamber.

[0018] The mixed gas flows from these small holes 1-6-1 to the reaction chamber below. Due to the thermal radiation generated when the graphite base 22 located in the center of the reaction chamber is heated, the temperature of the gas mixing chamber will increa...

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Abstract

The invention is a extension growing device for metal organic chemical gas phase deposition kalium nitride base film, it includes reactor, whose character lies in: the reacting room is tube type double layer structure, and it is made up interior tube and exterior tube, the interior tube cavity is reacting cavity, the interior and exterior are inserted in the upper and subjacent fixing device, there is cooling water cavity between the interior and the exterior, the outer wall of exterior tube is winded with conduction heating coil, there sets a black lead base in the interior tube, the black lead is set on a ceramic tube, the ceramic tube connects with gearing part. The reactor has water cooling system, in order to maintain the low temperature within reactor, especially the part above crystal piece and gas mixing room; it can prevent the occurrence of pre-reaction.

Description

technical field [0001] The invention relates to a MOCVD GaN-based thin film epitaxial growth equipment, in particular to the innovative design of the reactor structure of the epitaxial growth equipment. Background technique [0002] MOCVD (Metal Organic Chemical Vapor Deposition) is a new type of vapor phase epitaxy growth technology developed on the basis of vapor phase epitaxy (VPE). It uses organic compounds of group III and group II elements and hydrides of group V and group VI elements as crystal growth raw materials, and performs vapor phase epitaxy on the substrate by thermal decomposition reaction to grow various group III-V, II- Thin film single crystal materials of Group VI compound semiconductors and their multiple solid solutions. General MOCVD equipment is composed of source supply system, gas transportation and flow control system, reaction chamber and temperature control system, tail gas treatment and safety protection and poison gas alarm system. Compared w...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/34H01L21/205
Inventor 张国华
Owner QINGDAO JASON ELECTRIC
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