Warpage control structure for metal base plate, semiconductor module, and inverter device

A metal base and metal plate technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc.

Pending Publication Date: 2022-01-07
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] However, as shown in the technology described in Patent Document 1, if only the same type of metal as the insulating substrate is pasted on the metal base plate, when the temperature of the metal pasted on the metal base plate changes from normal temperature to high temperature The amount of warpage is larger when the temperature changes from high temperature to normal temperature after the insulating substrate is bonded to the metal base plate in a high temperature state.

Method used

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  • Warpage control structure for metal base plate, semiconductor module, and inverter device
  • Warpage control structure for metal base plate, semiconductor module, and inverter device
  • Warpage control structure for metal base plate, semiconductor module, and inverter device

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Embodiment Construction

[0026] Embodiments of the present invention will be described below using the drawings. figure 1 It is a side view of the warpage control structure of the metal base plate which concerns on embodiment.

[0027] like figure 1 As shown, the warpage control structure of the metal base plate constitutes a part of the semiconductor module, and the warpage control structure of the metal base plate has a metal base plate 1 , a dissimilar metal layer 2 and an insulating substrate 4 .

[0028] The metal base plate 1 is approximately 100mm×100mm square in plan view, and has a thickness greater than or equal to 3.5mmt and less than or equal to 4.0mmt. In addition, as the material of the metal base plate 1, a material with high thermal conductivity such as aluminum, aluminum alloy, or copper is preferable. In this embodiment, aluminum is selected in order to reduce the total weight.

[0029] The dissimilar metal layer 2 is formed on the entire surface of the metal base plate 1 or only ...

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Abstract

The purpose of the present invention is to provide a technology that controls the warpage of a metal base plate generated while the temperature changes from a high temperature to room temperature, by providing the warpage to the metal base plate in a temperature change from room temperature to the high temperature. This warpage control structure for a metal base plate 1 comprises a metal base plate 1, a dissimilar metal layer 2, and an insulation substrate 4. The dissimilar metal layer was formed on the surface of the metal base plate 1. The insulation substrate 4 has metal plates 42a, 42b bonded to the surface of the dissimilar metal layer 2 via a bonding material 3 and arranged on both surfaces thereof. When the linear expansion coefficient of the metal base plate 1 is alpha1, the linear expansion coefficient of the dissimilar metal layer 2 is alpha2, and the linear expansion coefficient of the metal plates 42a, 42b is alpha3, alpha1>alpha3>alpha2 is satisfied.

Description

technical field [0001] The present invention relates to a technique for controlling warpage that occurs when an insulating substrate is bonded to a metal base plate at a high temperature. Background technique [0002] A semiconductor module employs a structure and a method of bonding an insulating substrate to a metal base plate. Inexpensive welding is often used as a common joining method. However, when the insulating substrate is welded to the metal base plate, the metal base plate warps after joining. The reason is that although the metal base plate does not warp when the temperature changes from normal temperature to high temperature when the solder melts, when the temperature changes from high temperature to normal temperature when the solder solidifies, due to the metal base plate and the insulation The difference in the linear expansion coefficient of the substrate causes large warpage in the metal base plate. At this time, when the initial warp of the metal base p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/14
CPCH01L23/14H01L23/562H01L23/3735H01L21/4875H01L24/32H01L25/0657H01L2224/32245H01L2924/3511
Inventor 川濑达也林启和田文雄前田笃志
Owner MITSUBISHI ELECTRIC CORP
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