A kind of wafer cleaning and drying method and mechanism

Abstract

The invention discloses a wafer cleaning and drying method, which comprises: the wafer enters the box and is completely immersed in the cleaning liquid, the bottom is supported and limited by a fixed support seat; a horizontal limiting mechanism moves vertically upwards to limit the swing of the wafer ; The propulsion mechanism moves vertically upwards for the first stroke to contact the wafer. The first stroke is the distance between the propulsion mechanism and the wafer; the propulsion mechanism moves upward with the wafer, and the horizontal limit mechanism moves upward in coordination, and maintains contact with the wafer. In the contact state, to limit the tilt of the wafer, the wafer moves upward continuously and extends out of the liquid surface, and the spray mechanism sprays dry gas on the wafer; when the horizontal limit mechanism is close to the liquid surface, it stops moving upward, and the propulsion mechanism keeps moving upward at this time , to ensure the continuous upward movement of the wafer until the wafer is completely detached from the cleaning solution. The invention also discloses a wafer cleaning and drying mechanism. The wafer of the present invention is in contact with the bottom propulsion mechanism from the beginning of rising, so as to ensure that the wafer is continuously sent out under force all the time, and the cleaning effect is guaranteed.

Description

technical field [0001] The invention belongs to the technical field of semiconductor integrated circuit chip manufacturing, and in particular relates to a wafer cleaning and drying method and mechanism. Background technique [0002] Chemical mechanical planarization is a processing technology in integrated circuit technology. With the development of technology, the requirements for processing technology will increase accordingly. At the same time, chemical mechanical planarization is a wet process in the wafer processing process, and a large amount of polishing liquid and different chemical reagents will be used in the entire process. Therefore, At the end of the process, the wafer needs to be cleaned and dried to remove particles attached to the surface of the wafer, so that it can enter the next process. [0003] In the existing integrated circuit equipment, the traditional drying method is spin drying, which uses the centrifugal force generated at high speed to remove th...

AI Technical Summary

Problems solved by technology

At this time, if the positioning groove of the wafer is facing downward, the thimble structure must first complete the empty stroke generated by the part where the positioning groove is located, before continuing to push the wafer up, causing the wafer to stay, that is, causing the wafer to move. Discontinuous, which greatly affects the effect of the Marangoni effect, resulting in incomplete drying, and liquid still exists on the surface of the wafer

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