Command monitoring method and device, controller, system, equipment and storage medium

A command and memory technology, applied in the field of memory, can solve the problems of large hardware resources and consumption, and achieve the effect of saving hardware resources and preventing data loss

Active Publication Date: 2021-09-03
HYGON INFORMATION TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the known scheme, most of the row hammer control is counted by the Active command (activation command) in units of Row (row) or Bank (storage block), and the system with more memory cell arrays will consume relatively large hardware resource

Method used

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  • Command monitoring method and device, controller, system, equipment and storage medium
  • Command monitoring method and device, controller, system, equipment and storage medium
  • Command monitoring method and device, controller, system, equipment and storage medium

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Embodiment Construction

[0019] The technical solutions in the embodiments of the present application will be described below with reference to the drawings in the embodiments of the present application. In the description of the present application, the terms "first", "second" and the like are only used for distinguishing descriptions, and cannot be understood as indicating or implying relative importance.

[0020] Such as figure 1 As shown, this embodiment provides an electronic device 1, including: at least one processor 11 and a memory 12, figure 1 Take a processor as an example. Processor 11 and memory 12 are connected via bus 10 . The memory 12 stores instructions that can be executed by the processor 11, and the instructions are executed by the processor 11, so that the electronic device 1 can execute all or part of the flow of the method in the following embodiments, and the memory is hammered in the manner of a shared counter. Click Control.

[0021] In an embodiment, the electronic devic...

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Abstract

The invention provides a command monitoring method and device, a controller, a system, equipment and a storage medium, and the method comprises the steps: obtaining the first address information of a target storage unit array specified by an activation command and the current configuration information of all storage unit arrays in the storage when the activation command of the storage is monitored; based on the first address information, indexing the current configuration information and a preset address hash table, a first target counter specified by the activation command from a preset counter table, wherein the total number of counters in the counter table is less than the total number of memory cell arrays in the memory; judging whether the count value of the first target counter reaches a first threshold value or not; and if the count value of the first target counter reaches a first threshold value, stopping sending of the activation command, and sending a refresh management command request to a refresh controller of the memory. According to the method and the device, hardware resources of the counter can be saved under the condition that data loss caused by the line hammering command is prevented.

Description

technical field [0001] The present application relates to the technical field of memory, in particular, to a command monitoring method, device, controller, system, equipment and storage medium. Background technique [0002] Volatile memory devices such as DRAMs determine data based on charge stored in capacitors. However, since the charge stored in the capacitor may leak in various forms over time, a volatile memory device periodically performs a refresh operation. As processes for manufacturing memory devices shrink and the interval between word lines narrows, the influence of charges of memory cells connected to another word line adjacent to the word line due to voltage distribution of the word line increases. Row hammering occurs when a word line is intensively accessed, that is, due to the voltage of the active state of one word line, the data stored in the memory cells connected to other word lines adjacent to that word line lost. Charges stored in memory cells may b...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F11/30G06F16/22G06M3/02
CPCG06F11/3037G06F11/3051G06F16/2255G06M3/02
Inventor 杜倩倩曾峰
Owner HYGON INFORMATION TECH CO LTD
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