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A long-wavelength pass filter based on metasurface array structure

An array structure, metasurface technology, applied in the direction of filters, optics, optical components, etc., can solve the problem that large-size filters cannot meet the needs of use, and achieve good UV blocking and infrared transmission performance, cut-off slope Steep, promising results

Active Publication Date: 2022-04-22
YANGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

With the development of miniaturization and integration of devices, large-size filters are gradually unable to meet the needs of use

Method used

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  • A long-wavelength pass filter based on metasurface array structure
  • A long-wavelength pass filter based on metasurface array structure
  • A long-wavelength pass filter based on metasurface array structure

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Embodiment Construction

[0049] The present invention will be further explained below in conjunction with the accompanying drawings.

[0050] Such as Figure 2 to Figure 6 As shown, a long-wave pass filter based on the metasurface array structure, including three layers of substrate, transition layer and metasurface structure; the substrate material is SIO 2 , the transition layer material is CaF 2 ; The metasurface structure of each array unit is composed of two parts. The first part is a three-dimensional "well" structure formed by stacking GaAs strip materials. The strip materials of this part are evenly distributed in the center of the transition layer. 1 / 4 to the left and right of the point; the second part is a GaAs sphere embedded in the transition layer and the center of the ball coincides with the center point of the transition layer.

[0051] In this embodiment, the array period p=190nm; the thickness of the transition layer b=130nm; the radius of the GaAs sphere r=70nm; The width of the ...

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Abstract

The invention discloses a long-wave pass optical filter based on a metasurface array structure, which includes three layers of a substrate, a transition layer and a metasurface structure; the metasurface structure of each array unit is composed of two parts, the first part is made of GaAs strips The materials are stacked in a three-dimensional "well" shape structure; the second part is a GaAs sphere embedded in the transition layer and the center of the ball coincides with the center point of the transition layer, and the plane wave incident light is incident from bottom to top. The present invention is based on the sub-wavelength metasurface structure internal resonance characteristics of the long-wave pass filter for filtering ultraviolet rays. From the perspective of the entire wave band, the transmittance curve shows a relatively perfect ladder-shaped trend, and the transmittance in the short-wave band Very low, the transmittance in the long wave band is extremely high, the cut-off band between the low transmittance band and the high transmittance band occupies a very small proportion, and the cut-off slope is very steep. That is, the long-wave pass filter can work in the ultraviolet band and the infrared band, and has good ultraviolet blocking and infrared transmission properties.

Description

technical field [0001] The invention relates to a long-wave pass filter based on a metasurface array structure. Background technique [0002] A filter is an optical device used to select the desired wavelength band, usually made by adding special dyes to plastic or glass sheets or adding optical coatings. There are always geometric errors and wave propagation deviations in traditional optical filters, which limit the performance of optical filters to a certain extent. In recent years, sub-wavelength metasurface structure filters can well overcome the problems existing in traditional filters. A metasurface is an artificial layered material with a thickness smaller than a wavelength. Metasurfaces can realize the flexible and effective control of electromagnetic wave polarization, amplitude, phase, polarization mode, propagation mode and other characteristics. It has the characteristics of low profile, low loss, and easy design and implementation. [0003] Plasmonic cut-off...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B5/20
CPCG02B5/201G02B5/208
Inventor 赵亮余跃钱沁宇王钦华
Owner YANGZHOU UNIV
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