Three-dimensional memory device

Abstract

A three-dimensional memory device comprises: a substrate, on which a core region and a step region adjacent to the core region are defined, wherein the core region may include a first region and a second region, and the second region may be located between the first region and the step region; a stack layer, which may be on the substrate, wherein the stack layer may include insulating layers and gate layers that are alternately stacked; a channel structure wherein the channel structure can penetrate through the stacking layer in the first region; and a first virtual channel structure, wherein the first virtual channel structure can penetrate through the stacking layer in the second region, and the orthographic projection of the first virtual channel structure on the surface of the substrate can be a strip-shaped profile. According to the three-dimensional memory device provided by the invention, a conventional circular virtual channel structure adjacent to the channel structure is improved into the strip-shaped virtual channel structure, so that an electric leakage phenomenon caused by insufficient filling can be improved, and / or the problem of abnormity of the selective epitaxial growth layer can be improved, silicon damage is avoided, and the performance of the memory device is obviously improved.

Description

technical field [0001] The present application relates to the field of semiconductor technology, in particular, to a three-dimensional memory device with strip-shaped dummy channels. Background technique [0002] In order to overcome the limitations of two-dimensional memory devices, memory devices with a three-dimensional (3D) structure have been developed and mass-produced in the industry, which improves integration density by three-dimensionally arranging memory cells on a substrate. [0003] In three-dimensional memory devices, the gate stack structure and channel structure are generally used to provide selection transistors and storage transistors, conductive channels are used to form the interconnection between peripheral circuits and memory cells, and virtual channel structures are used to provide mechanical support. A three-dimensional memory device generally includes a plurality of stacked layers of oxide and nitride stacked on a substrate, and channel holes, dummy ...

AI Technical Summary

Problems solved by technology

However, in the preparation process of channel holes and dummy channel holes, problems of under etch or abnormal selective epitaxial growth (SEG) are prone to occur, which may easily lead to leakage and affect three-dimensional memory devices. performance

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