Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Afferent neuron circuit and mechanical sensing system

A technology of afferent neurons and circuits, applied in the field of afferent neuron circuits and mechanosensory systems, can solve problems such as unfavorable large-scale integrated use, complex structure of afferent neuron circuits, and poor scalability

Pending Publication Date: 2021-05-18
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The invention provides an afferent neuron circuit and a mechanosensory system, which solves the technical problems in the prior art that the afferent neuron circuit has a complex structure, poor scalability, and is not conducive to large-scale integrated use.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Afferent neuron circuit and mechanical sensing system
  • Afferent neuron circuit and mechanical sensing system
  • Afferent neuron circuit and mechanical sensing system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 2

[0105] see Figure 7 , on the basis of the first embodiment, another solution of the volatile threshold switching device TS is provided.

[0106] The volatile threshold transition device TS includes:

[0107] second substrate 21;

[0108] a third isolation layer 22 formed on the second substrate 21;

[0109] The second lower electrode 23 is formed on the third isolation layer 22;

[0110] The second functional layer 24 is formed on the third isolation layer 23;

[0111] a second intermediate electrode 25 formed on the second functional layer 24;

[0112] A second resistive film 26 is deposited on the second intermediate electrode 25 as the resistor Rc, and a second upper electrode 27 is deposited on the second resistive film 26 .

[0113] In this embodiment, the second substrate 21 is a silicon wafer;

[0114] The third isolation layer 22 is SiO 2 layer;

[0115] The material of the second lower electrode 23 is an inert conductive material such as TiN, Poly-Si, Pd, Pt,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the technical field of brain-like bionics, and discloses an afferent neuron circuit, which comprises a resistor Rc and a volatile threshold conversion device TS, the volatile threshold value conversion device TS is provided with a parasitic capacitance CParasitic; the first end of the resistor Rc is used as a signal input end, and the second end of the resistor Rc is used as a signal output end; the first end of the volatile threshold conversion device TS is connected with the signal output end, and the second end of the volatile threshold conversion device TS is grounded. The afferent neuron circuit provided by the invention is simple in structure, good in contractibility and suitable for large-scale integration.

Description

technical field [0001] The invention relates to the technical field of brain-inspired bionics, in particular to an afferent neuron circuit and a mechanosensory system. Background technique [0002] The artificial afferent neuron is a component that converts external analog signals into system impulse signals, and has important applications in the construction of impulse neural network systems. At present, the afferent neuron circuit is mainly based on CMOS circuit, which has a complex structure and poor scalability, which is not conducive to large-scale integration. Contents of the invention [0003] The invention provides an afferent neuron circuit and a mechanosensory system, which solve the technical problems in the prior art that the afferent neuron circuit has a complex structure, poor scalability, and is unfavorable for large-scale integrated use. [0004] In order to solve the above technical problems, the present invention provides an afferent neuron circuit, comp...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06N3/063H01L41/047H01L41/187H01L45/00
CPCG06N3/063H10N30/87H10N30/877H10N30/8536H10N30/853H10N70/20H10N70/841H10N70/881H10N70/883G06N3/049G06N3/065H10B63/00H10N39/00H10N30/1051
Inventor 刘琦张续猛刘明吕杭炳吴祖恒
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com