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Preparation device of gallium nitride film

A preparation device, gallium nitride technology, applied in ion implantation plating, metal material coating process, coating, etc., can solve the problems of poor applicability, inconvenient fixing of film sample holders, etc., and achieve internal temperature stability and thermal insulation performance Good, good safety performance

Active Publication Date: 2021-04-09
无锡英诺赛思科技有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The purpose of the present invention is to provide a preparation device for gallium nitride thin film, to solve the problem of inconvenient fixing of thin film sample holders of different sizes and poor applicability in the above-mentioned background technology

Method used

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  • Preparation device of gallium nitride film
  • Preparation device of gallium nitride film
  • Preparation device of gallium nitride film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Example 1: See Figure 1-6, a preparation device for gallium nitride thin films, comprising a preparation chamber 1 and an evaporation chamber 2, the evaporation chamber 2 is fixedly connected to the bottom end of the preparation chamber 1, the interior of the evaporation chamber 2 is fixedly connected to a quartz crucible 3, and the quartz crucible 3 The inside is fixedly connected with a heating wire 4, the top of the evaporation chamber 2 is fixedly connected with an ionization chamber 5, the outer wall of the preparation chamber 1 is provided with a thermal insulation structure 6, and the two sides of the preparation chamber 1 are provided with an explosion-proof structure 7 near the top. One side inside the preparation chamber 1 is fixedly connected with a radio frequency ionization gun 8, and the middle position of the top of the preparation chamber 1 is fixedly connected with a vacuum pump 12. The model of the vacuum pump 12 can be 2BV-5110, and one side of the pr...

Embodiment 2

[0040] Embodiment 2: The thermal insulation structure 6 is composed of a cavity 601, a casing 602, a connecting rod 603, a nut 604, a through hole 605 and a thermal insulation rock wool 606. The casing 602 is arranged outside the preparation bin 1, between the casing 602 and the preparation bin 1 A cavity 601 is provided, and a plurality of sets of through holes 605 are arranged inside the shell 602. A plurality of sets of connecting rods 603 are fixedly connected to the outer wall of the preparation bin 1, one side of the connecting rods 603 runs through the through holes 605, and the outside of the connecting rods 603 One side is provided with a nut 604, and the interior of the cavity 601 is filled with thermal insulation rock wool 606;

[0041] The outside of one side of the connecting rod 603 is provided with threads, and there is a one-to-one correspondence between the connecting rod 603 and the through hole 605;

[0042] Specifically, as figure 1 and Figure 4 As shown...

Embodiment 3

[0043] Embodiment 3: Explosion-proof structure 7 is made up of through pipe 701, piston 702, fixed rod 703, tension plate 704 and spring 705, and through pipe 701 is respectively arranged in the inside of preparation bin 1 both sides, and inside through pipe 701 is provided with piston 702, one side of the piston 702 is fixedly connected with a fixed rod 703, one side of the fixed rod 703 is fixedly connected with a tension plate 704, and a spring 705 is fixedly connected between the two ends of one side of the tension plate 704 and the preparation bin 1;

[0044] Specifically, as figure 1 and image 3 As shown, when in use, if the pressure inside the preparation chamber 1 is too high, the piston 702 will be pushed out under the relatively high pressure, and at this time, the fixed rod 703 will push the tension plate 704 outward to make the tension The tight plate 704 drives the spring 705 to stretch until the piston 702 is ejected from the inside of the through pipe 701, so ...

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Abstract

The invention discloses a preparation device of a gallium nitride film, and particularly relates to the technical field of gallium nitride film preparation. The preparation device of the gallium nitride film comprises a preparation bin and an evaporation chamber, the evaporation chamber is fixedly connected to the bottom end of the interior of the preparation bin, a quartz crucible is fixedly connected to the interior of the evaporation chamber, an electric heating wire is fixedly connected to the interior of the quartz crucible, an ionization cavity is fixedly connected to the top end of the evaporation chamber, and a heat preservation structure is arranged on the outer side wall of the preparation bin. According to the preparation device of the gallium nitride film, an cavity, a shell, a connecting rod, a nut, a through hole and heat preservation rock wool, during use, the shell is fixed to the exterior of the preparation bin by utilizing the nut and the through hole, at the moment, the cavity is formed between the preparation bin and the shell, then the interior of the cavity is filled with the heat preservation rock wool, the heat insulation performance of the heat preservation rock wool is utilized, and therefore, rapid loss of heat in the interior of the preparation bin can be avoided, then the temperature in the interior of the preparation bin can be kept stable, and the preparation quality of the gallium nitride film is improved.

Description

technical field [0001] The invention relates to the technical field of gallium nitride thin film preparation, in particular to a preparation device for gallium nitride thin film. Background technique [0002] Gallium nitride thin film is a compound of nitrogen and gallium. It is a semiconductor material with a direct energy gap. The preparation of gallium nitride thin film by ionized cluster beam deposition method is the simplest and most practical method for preparing gallium nitride thin film, but now Some gallium nitride thin film preparation devices have many problems and defects, so a new gallium nitride thin film preparation device is needed. [0003] In the process of realizing the present invention, the inventors have found that at least the following problems in the prior art have not been resolved: [0004] (1) The traditional gallium nitride thin film preparation device is inconvenient to fix thin film sample holders of different sizes, and has poor applicability...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/26C23C14/06C23C14/54
CPCC23C14/26C23C14/0617C23C14/54
Inventor 徐宏马君健闫大为黄金荣周德金王晓莹于理科
Owner 无锡英诺赛思科技有限公司
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