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A control method of silicon carbide epitaxial growth and silicon carbide epitaxial wafer

A technology of epitaxial growth and control method, which is applied in the field of semiconductor material preparation, can solve the problems that silicon carbide cannot maintain the crystal form, etc., and achieve the effect of avoiding excessive etching, reducing the generation of surface pits, and improving quality

Active Publication Date: 2021-10-08
EPIWORLD INT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method for controlling the epitaxial growth of silicon carbide in order to overcome the fact that the existing silicon carbide epitaxial growth cannot maintain a certain crystal form, which is suitable for continuous high-speed growth of P-type SiC epitaxial layers with different doping concentrations craft

Method used

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  • A control method of silicon carbide epitaxial growth and silicon carbide epitaxial wafer
  • A control method of silicon carbide epitaxial growth and silicon carbide epitaxial wafer

Examples

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Effect test

Embodiment 1

[0050] A method for controlling the epitaxial growth of P-type silicon carbide combined with high doping and low doping, comprising the following steps:

[0051] Step 1: Place the silicon carbide substrate in a transfer chamber filled with argon, and use a mechanical arm to transfer it to a silicon carbide CVD reaction chamber in a hydrogen atmosphere. The initial pressure of the reaction chamber is 1000mbar, and the initial temperature is 800°C.

[0052] Step 2: keep feeding hydrogen gas 1 into the reaction chamber, the flow rate of hydrogen gas 1 is 100slm, set the temperature of the reaction chamber to 1630°C, and the pressure to 150mbar. After the temperature and pressure of the reaction chamber gradually reach the set value and stabilize, maintain it for 10 minutes , to pre-etch the substrate.

[0053] Step 3: Start high-doped P-type epitaxial growth, the growth conditions are as follows:

[0054] a. The temperature of the reaction chamber is 1630°C, the flow rate of hyd...

Embodiment 2

[0063] A method for controlling the epitaxial growth of P-type silicon carbide combined with high doping and low doping, comprising the following steps:

[0064] Step 1: Place the silicon carbide substrate in a transfer chamber filled with argon, and use a mechanical arm to transfer it to a silicon carbide CVD reaction chamber in a hydrogen atmosphere. The initial pressure of the reaction chamber is 1000mbar, and the initial temperature is 800°C.

[0065] Step 2: keep feeding hydrogen gas 1 into the reaction chamber, the flow rate of hydrogen gas 1 is 100slm, set the temperature of the reaction chamber to 1600°C, and the pressure to 500mbar. After the temperature and pressure of the reaction chamber gradually reach the set value and stabilize, maintain it for 10 minutes , to pre-etch the substrate.

[0066] Step 3: Start high-doped P-type epitaxial growth, the growth conditions are as follows:

[0067] a. The temperature of the reaction chamber is 1600°C, the flow rate of hyd...

Embodiment 3

[0077] A method for controlling the epitaxial growth of P-type silicon carbide combined with high doping and low doping, comprising the following steps:

[0078]Step 1: Place the silicon carbide substrate in a transfer chamber filled with argon, and use a mechanical arm to transfer it to a silicon carbide CVD reaction chamber in a hydrogen atmosphere. The initial pressure of the reaction chamber is 1000mbar, and the initial temperature is 800°C.

[0079] Step 2: keep feeding hydrogen gas 1 into the reaction chamber, the flow rate of hydrogen gas 1 is 100slm, set the temperature of the reaction chamber to 1550°C, and the pressure to 500mbar. After the temperature and pressure of the reaction chamber gradually reach the set value and stabilize, maintain it for 10 minutes , to pre-etch the substrate.

[0080] Step 3: Start high-doped P-type epitaxial growth, the growth conditions are as follows:

[0081] a. The temperature of the reaction chamber is 1550°C, the flow rate of hydr...

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Abstract

The invention relates to a method for controlling epitaxial growth of silicon carbide and a silicon carbide epitaxial wafer. The control method comprises: placing a silicon carbide substrate into a reaction chamber filled with hydrogen to perform etching; heating the reaction chamber and introducing a growth source, Carry out the first epitaxial growth; stop feeding the hydrogen gas, discharge the remaining gas in the reaction chamber from the reaction chamber, only pass inert gas into the reaction chamber to replace the remaining gas, and reduce the pressure of the reaction chamber to the first pressure at the same time. During the process, the epitaxial growth control parameters were adjusted; after the parameters were adjusted, the inert gas in the reaction chamber was replaced with hydrogen, and the pressure of the reaction chamber was increased to the second pressure for the second epitaxial growth; the temperature was lowered and returned to the initial pressure to obtain Silicon carbide epitaxial wafers. Continuous P-type epitaxial layers or N-type epitaxial layers with different doping types and different doping concentrations can be obtained by using the above method, and at the same time, the generation of pits on the surface of the epitaxial wafer can be reduced, and the quality of the epitaxial wafer can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor material preparation, in particular to a silicon carbide epitaxial growth control method and a silicon carbide epitaxial wafer. Background technique [0002] Silicon carbide (SiC), as a typical representative of the third-generation semiconductor material, has excellent physical, chemical and electrical properties. Its critical breakdown field strength is ten times that of silicon, its thermal conductivity is three times that of silicon, and it has an electron saturation migration rate twice higher than that of silicon, making it ideal for high-temperature, high-frequency, radiation-resistant, and high-power applications. extremely ideal semiconductor material. At the same time, SiC is also one of the most mature and widely used wide bandgap semiconductor materials in crystal growth technology and device manufacturing level. In 2001, Infineon of Germany took the lead in putting SiC Schottk...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L21/04
CPCH01L21/02378H01L21/02529H01L21/0257H01L21/02658H01L21/0445
Inventor 黄海林冯淦赵建辉
Owner EPIWORLD INT
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