Method, device, storage medium and terminal for over-erasing verification based on real modeling

A verification method and over-erasing technology, which is applied in the field of non-volatile memory verification, can solve the problems of not reflecting the real characteristics of non-volatile memory and accurately verifying the functions of non-volatile memory controllers, so as to achieve accurate verification and enhanced automation degree of effect

Active Publication Date: 2021-11-30
XTX TECH INC
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide an over-erasure verification method, device, storage medium and terminal based on real modeling, aiming at solving the problem that the existing over-erasure verification of storage units in an overly ideal memory cell model cannot reflect abnormal The true characteristics of volatile memory, the problem of not being able to accurately verify the function of the non-volatile memory controller

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method, device, storage medium and terminal for over-erasing verification based on real modeling
  • Method, device, storage medium and terminal for over-erasing verification based on real modeling
  • Method, device, storage medium and terminal for over-erasing verification based on real modeling

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0035] The following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, not all of them. The components of the embodiments of the application generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations. Accordingly, the following detailed description of the embodiments of the application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of the application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of the present application.

[0036] It should ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an over-erasure verification method, device, storage medium and terminal based on real modeling. By using Verilog codes to model the storage units that need to be over-erased and repaired in the non-volatile memory, after receiving When erasing the repair command, a random number is generated, and the memory unit in the array model is erased and repaired according to the random number. When it is detected that the number of operations reaches the random number, it is judged whether all the data in the memory unit in the array model is written as 0 and output the verification result of over-erasing modification; in the verification stage of the non-volatile memory control terminal, a highly close to the actual array model is established through Verilog code, and the non-volatile memory control terminal is simulated for over-erasing repair by verifying the array model The authenticity of the feature can more accurately verify the accuracy of the control terminal operation, and the automatic inspection of the erase repair operation results enhances the automation of the verification.

Description

technical field [0001] The present invention relates to the technical field of non-volatile memory verification, in particular to an over-erasure verification method, device, storage medium and terminal based on real modeling. Background technique [0002] In the verification stage of the non-volatile memory control terminal, a memory cell model is often established to receive the controller operation and feedback the operation result. The traditional method is generally that the memory cell model will change the data in the storage unit that needs to be erased and repaired from 1 to 0 after receiving the erased and repaired data. The existing storage units in this memory cell model The over-erase verification method is completely idealized, and cannot reflect the real characteristics of the non-volatile memory, so it cannot accurately verify the function of the non-volatile memory controller. [0003] Therefore, the existing technology still needs to be improved and develo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/34G11C29/44
CPCG11C16/3409G11C16/345G11C29/44
Inventor 张新展陈胜源朱雨萌张宇
Owner XTX TECH INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap