Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Memory control method, memory storage device and memory control circuit unit

A control method and a control circuit technology, which are applied in the direction of instruments, electrical digital data processing, input/output to record carriers, etc., can solve the problems of reducing the data reading efficiency of memory storage devices, etc.

Active Publication Date: 2021-03-05
PHISON ELECTRONICS
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the depth of the command queue storing the read command is relatively deep (that is, there are many commands to be processed) and / or the amount of data to be processed is large, the read-ahead operation is used to pre-read the next Data may instead reduce the data read efficiency of the memory storage device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memory control method, memory storage device and memory control circuit unit
  • Memory control method, memory storage device and memory control circuit unit
  • Memory control method, memory storage device and memory control circuit unit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0096] Generally speaking, a memory storage device (also called a memory storage system) includes a rewritable non-volatile memory module (rewritable non-volatile memory module) and a controller (also called a control circuit). Typically memory storage devices are used with a host system such that the host system can write data to or read data from the memory storage device.

[0097] figure 1 It is a schematic diagram showing a host system, a memory storage device and an input / output (I / O) device according to an exemplary embodiment of the present invention. figure 2 It is a schematic diagram showing a host system, a memory storage device and an I / O device according to another exemplary embodiment of the present invention.

[0098] Please refer to figure 1 and figure 2 , the host system 11 generally includes a processor 111 , a random access memory (random access memory, RAM) 112 , a read only memory (read only memory, ROM) 113 and a data transmission interface 114 . The...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The embodiment of the invention provides a memory control method, which is used for a rewritable nonvolatile memory module. The rewritable nonvolatile memory module comprises a plurality of entity units. The method comprises the following steps: receiving at least one first reading instruction from a host system; and determining whether to start a pre-reading operation or not according to the total data volume of the to-be-read data indicated by the at least one first reading instruction. Wherein the pre-reading operation is used for pre-reading data stored in at least one first logic unit, and the at least one first logic unit is mapped to at least one of the plurality of entity units. The invention also provides a memory storage device and a memory control circuit unit.

Description

technical field [0001] The invention relates to a memory control technology, in particular to a memory control method, a memory storage device and a memory control circuit unit. Background technique [0002] Digital cameras, mobile phones, and MP3 players have grown rapidly in recent years, making consumers' demand for storage media also increase rapidly. Since the rewritable non-volatile memory module (for example, flash memory) has the characteristics of data non-volatility, power saving, small size, and no mechanical structure, it is very suitable for built-in Among the various portable multimedia devices listed above. [0003] Generally speaking, in order to improve the data reading efficiency of the memory storage device, when performing continuous reading, a pre-read operation can be used to predict the next logical unit to be accessed and pre-read the data stored in the logical unit. However, when the depth of the command queue storing the read command is relatively...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F3/06
CPCG06F3/061G06F3/0655G06F3/0679
Inventor 陈振业
Owner PHISON ELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com