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Film longitudinal thermal diffusion coefficient measuring system and method based on medium detector

A technology of thermal diffusivity and measurement system, which is applied in the field of thin film longitudinal thermal diffusivity measurement system based on dielectric detector, can solve the problems of inaccurate and impossible measurement of thin film thermal diffusivity, and achieve shortened test cycle and small sample damage , the effect of flexible test methods

Active Publication Date: 2021-02-26
TONGJI UNIV
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a film longitudinal thermal diffusivity measurement system and method based on a dielectric film in order to overcome the defect that the measurement of the thermal diffusivity of the film is not accurate enough in the prior art CN109557129A, and the double-layer materials need to be exactly the same or they cannot be measured.

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  • Film longitudinal thermal diffusion coefficient measuring system and method based on medium detector
  • Film longitudinal thermal diffusion coefficient measuring system and method based on medium detector
  • Film longitudinal thermal diffusion coefficient measuring system and method based on medium detector

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Embodiment 1

[0056] This embodiment provides a film longitudinal thermal diffusivity measurement system based on a thin film dielectric detector, which is used to measure the longitudinal thermal diffusivity of the film 5 to be measured. The film longitudinal thermal diffusivity measurement system includes a pulse light source 1, a beam splitter 2, a front Set current amplifier 12, oscilloscope 13, photoelectric trigger device and medium detector;

[0057] The dielectric detector includes a grounded metal electrode 7, a dielectric film 6 and a pressurized metal electrode 8 arranged in sequence. One side of the measured film 5 is provided with a laser target 4, and the other side is used to connect to the grounded metal electrode 7. The grounded metal electrode 7 is grounded, and the pressurized metal electrode 8 is connected to a DC high-voltage power supply 9, and the pressurized metal electrode 8 is also connected to the input terminal of the pre-current amplifier 12, and the ground termi...

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Abstract

The invention relates to a film longitudinal thermal diffusion coefficient measuring system and method based on a medium detector, which are used for measuring the longitudinal thermal diffusion coefficient of a film. The film longitudinal thermal diffusion coefficient measuring system comprises a pulse light source, a spectroscope, the medium detector, a preposed current amplifier, an oscilloscope and a photoelectric trigger device, wherein the dielectric detector comprises a grounding metal electrode, a dielectric film and a pressurizing metal electrode which are arranged in sequence, the grounding metal electrode is kept grounded, the pressurizing metal electrode is connected with a direct-current high-voltage power supply, the pressurizing metal electrode is further connected with an input end of a preposed current amplifier, a grounding end of the preposed current amplifier is grounded, one side of the measured film is provided with a laser light target, and the other side is usedfor connecting a grounding metal electrode end of the medium detector. Compared with the prior art, the film longitudinal thermal diffusion coefficient measuring system and the method are simple andeasy to operate, can quickly complete measurement, and can be used for measuring various dielectric films and other metal conductive thin layers which are widely applied to the fields of electrical insulation and microelectronic devices, such as BOPP, PI and PVDF.

Description

technical field [0001] The invention relates to the field of film longitudinal thermal diffusivity measurement, in particular to a film longitudinal thermal diffusivity measurement system and method based on a dielectric detector. Background technique [0002] The thermal diffusivity of thin film is an important thermophysical parameter of thin film materials. Only by accurately grasping the thermal diffusivity of thin film can the thin film be used more reasonably and effectively, which is helpful for the design of electronic devices and thermal management in the working process. When microelectronic devices work, the energy loss is usually converted into heat energy and released, which is prone to heat accumulation. The increase in internal temperature may directly lead to material fusion, resulting in line failure or even explosion. The surface of the component is used as a heat dissipation film for insulation and isolation. Capability directly determines the safety, stab...

Claims

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Application Information

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IPC IPC(8): G01N25/20G06F30/23
CPCG01N25/20G06F30/23
Inventor 郑飞虎陈师杰张冶文
Owner TONGJI UNIV
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