Preparation method of a heterojunction photodetector and photodetector

Abstract

The invention discloses a method for preparing a heterojunction photodetector and the photodetector. In the preparation method, a mask is provided on the patterned first material layer and the mask covers the first On the surface of the material layer except the heterojunction region, a second material layer is arranged on the substrate, and the second material layer is stacked with the first material layer in the heterojunction region, so that not only the second material layer is on the substrate The setting method above is more flexible, which avoids the need for organic-assisted stripping and transfer in the prior art to realize the stacking of two materials, and can also reduce the mask’s impact on the first material when patterning the second material layer. Therefore, the preparation method of the heterojunction photodetector provided by the present invention can realize the flexibility and scale of the preparation of the heterojunction of low-dimensional materials, and also make the preparation of the heterojunction compatible with the CMOS process, reducing the Barriers and costs of industrial fabrication of heterojunctions.

Description

technical field [0001] The invention belongs to the technical field of photodetectors, and in particular relates to a preparation method of a heterojunction photodetector and the photodetector. Background technique [0002] Low-dimensional materials have become an important support for the development of a new generation of high-performance optoelectronic devices due to their outstanding optoelectronic properties, ultra-high carrier mobility, and excellent mechanical strength. They have application potential that cannot be achieved by traditional bulk materials. However, a single low-dimensional material still cannot meet the needs of multifunctional devices in practical applications. Therefore, the idea of ​​assembling different low-dimensional materials into van der Waals heterostructures to further improve device performance has emerged as the times require. Compared with traditional semiconductor heterojunctions, van der Waals heterojunctions are no longer limited by the...

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Problems solved by technology

Therefore, the detector based on this mechanism cannot perform detection under zero bias voltage, and the dark current of the detector is not small, and the minimum detectable power (sensitivity) is large, which cannot guarantee high-end communications such as lidar, quantum communication, and atmospheric optical communication. Backhaul small signal detection in the link and other high-precision detection requirements

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