Power module based on modular silicon carbide device

A technology of power modules and silicon carbide, which is applied in the direction of output power conversion devices, electrical components, power electronics modification, etc., can solve the problems that are not suitable for the use of large-capacity converters in the power grid, and the power of devices is small, so as to achieve stable overall performance , Reduce the loop inductance, the effect of small size

Inactive Publication Date: 2020-11-13
ELECTRIC POWER RES INST OF GUANGDONG POWER GRID
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, only some manufacturers use TO-247 packaged SiC power devices to design power modules, but the power of such devices is small, and the power modules made are not suitable for the use of large-capacity converters in power grids

Method used

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  • Power module based on modular silicon carbide device
  • Power module based on modular silicon carbide device

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Embodiment 1

[0043] The above is the first embodiment of a power module based on a modular silicon carbide device provided in the embodiment of the present application, and the following is the second embodiment of a power module based on a modular silicon carbide device provided in the embodiment of the present application. For details, please refer to refer to Figure 1 to Figure 2 .

[0044]A power module based on a modular silicon carbide device, comprising: a casing 1, a high-frequency transformer 6, a support capacitor 4, a DC blocking capacitor 7, a stacked busbar 5, a plurality of SiC power devices 8, and a radiator 11; The device 11 is installed in the case 1; a plurality of SiC power devices 8 are installed in the case 1 on the surface of the radiator 11; the stacked busbar 5 is installed on the top of the plurality of SiC power devices 8, and is connected with the plurality of SiC power devices 8 Electrical connection; the support capacitor 4 is installed in the case 1 on the s...

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Abstract

The invention discloses a power module based on modular silicon carbide devices, and relates to the technical field of power electronics. The module comprises a machine shell, a high-frequency transformer, a support capacitor, a blocking capacitor, a laminated busbar, a plurality of SiC power devices and a radiator. The radiator is installed in the machine shell. The plurality of SiC power devicesare mounted on the surface of the radiator in the machine shell. The laminated busbar is arranged at the tops of the plurality of SiC power devices and is electrically connected with the plurality ofSiC power devices. The support capacitor is arranged at one side of the radiator in the machine shell and is electrically connected with the plurality of SiC power devices through the laminated busbar. The high-frequency transformer is installed in the machine shell. The blocking capacitor is installed in the machine shell and is connected between the SiC power device and the high-frequency transformer. The power module has the advantages of higher capacity, higher efficiency and smaller size, and is more suitable for being applied to a power grid.

Description

technical field [0001] The present application relates to the technical field of power electronics, in particular to a power module based on a modular silicon carbide device. Background technique [0002] At present, with the increasing application of power electronic conversion equipment in the power grid, its energy efficiency is very important for power electronic converters and plays a decisive role in the energy conversion efficiency of the power grid. The most critical components in the converter are power electronic devices. At present, insulated gate bipolar transistors (IGBTs) using silicon (Si) materials are widely used, and silicon carbide (SiC) is rarely used. Compared with Si power devices, the energy loss of SiC power devices is only 50% of Si power devices, the heat generation is only 50% of Si devices, and has a higher current density. SiC power devices can effectively achieve high efficiency of power electronic systems , miniaturization and light weight, un...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/00H05K7/14H05K7/20
CPCH02M1/00H05K7/1432H05K7/2089Y02B70/10
Inventor 岳菁鹏赵艳军梁晓兵赵伟钟卓颖谢宁陶然秦妍王钤
Owner ELECTRIC POWER RES INST OF GUANGDONG POWER GRID
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