Vapor deposition chamber

Abstract

The invention discloses a vapor deposition chamber which comprises an upper outer wall, a reaction base, a supporting ring, a lower outer wall and a first flow guide ring, wherein the supporting ringis arranged between the upper outer wall and the lower outer wall and connected with the upper outer wall and the lower outer wall, the first flow guide ring and the reaction base are sequentially arranged on the inner side of the supporting ring, the first flow guide ring is borne on the lower outer wall, the lower outer wall, the first flow guide ring and the reaction base form a first sub-cavity, and a second sub-cavity is formed between the upper outer wall and the reaction base; a radial through air inlet through hole and a radial non-through air inlet cutting groove deviating from the air inlet through hole are formed in the first flow guide ring, the air inlet through hole is communicated with the first sub-cavity so as to introduce cleaning gas into the first sub-cavity, and the air inlet cutting groove is communicated with the second sub-cavity so as to introduce process gas into the second sub-cavity. According to the vapor deposition chamber, the vapor deposition chamber canbe conveniently cleaned.

Description

technical field [0001] The present application relates to the field of semiconductor device manufacturing, in particular to a vapor deposition chamber. Background technique [0002] Vapor deposition is to deliver process gas to the reaction chamber, deposit atoms on the substrate (for example, silicon wafer) through physical or chemical changes in the process gas, and then epitaxially grow a single crystal layer on the substrate. [0003] During silicon epitaxial growth, the cleanliness of the reaction chamber is extremely high. Therefore, before each silicon wafer is sent into the chamber, the reaction chamber must be cleaned (for example, etched) to keep the reaction chamber in good cleanliness. state. Therefore, the convenience of cleaning the reaction chamber becomes particularly important. [0004] In the existing technology (such as figure 2 As shown), the silicon wafer is carried on the reaction base 1001, and the reaction base 1001 divides the reaction chamber 100...

AI Technical Summary

Problems solved by technology

During vapor deposition, the process gas mainly enters the upper space 1002, but a small part will enter the lower space 1003 through the above-mentioned gap, which will pollute the lower space

When performing etching cleaning, the etching gas is still supplied along the intake path of the process gas, making it difficult for the etching gas to enter the space below, which makes it necessary to completely disassemble the reaction chamber to clean the space below, which greatly affects the reliability of the machine. Availability

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