Chemical source introducing system of atomic layer deposition coating equipment

Abstract

The invention relates to the technical field of thin film preparation, in particular to a chemical source introduction system of atomic layer deposition coating equipment. The chemical source introduction system comprises a plurality of chemical source introduction pipelines and a valve seat bottom plate, wherein the chemical source introduction pipelines are arranged on the valve seat bottom plate through gas introduction flanges; valve seat bottom plate heaters are arranged on the valve seat bottom plate; vacuum side heaters are additionally arranged at the positions, located on the vacuum sides of the gas introduction flanges, on the peripheries of the chemical source introduction pipelines; and the valve seat bottom plate heaters and the vacuum side heaters are jointed to carry out multi-stage heating on the chemical source introduction pipelines. The chemical source introduction system of the atomic layer deposition coating equipment provided by the invention has the advantages that multiple chemical sources can be introduced at the same time without causing condensation; each chemical source is heated in a multi-stage way, so that the process cycle time is further shortened;and a film forming effect of an atomic layer deposition coating process is ensured, the problem that film-forming particles exits in a product is solved, and the product quality is improved.

Description

technical field [0001] The invention relates to the technical field of thin film preparation, in particular to a chemical source introduction system of atomic layer deposition coating equipment. Background technique [0002] Atomic layer deposition (ALD) is a more commonly used coating technology, and its reaction process is generally as follows: 1) The reaction precursor enters the reaction chamber in a pulsed manner and chemically adsorbs on the substrate surface; 2) After the surface is saturated, use The inert gas flushes the excess reaction precursor out of the reaction chamber; 3) The second chemical precursor enters the reaction chamber in a pulsed manner and reacts with the precursor chemically adsorbed on the surface last time; 4) After the reaction is complete Finally, the excess precursor and by-products are blown out of the reaction chamber with an inert gas. [0003] At present, the chemical sources used in atomic layer deposition coating machines are usually l...

AI Technical Summary

Problems solved by technology

At present, the chemical source introduction system of atomic layer deposition coating equipment has the following problems: there are few types of chemical source gases; chemical sources are easy to form films in the delivery pipeline and other parts during the introduction process, resulting in a decline in the quality of film products, etc.

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