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Apparatus for surpoting substrate and manufacturing mathod threrof

A technology of a supporting device and a manufacturing method, which is applied in the manufacture of semiconductor/solid-state devices, a holding device using electrostatic attraction, a discharge tube, etc., can solve the problem of not being able to obtain insulation withstand voltage, etc., and achieve the effect of minimizing discharge

Active Publication Date: 2020-04-21
SEMES CO LTD
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0007] In order to suppress the generation of discharge, technical development is carried out towards reducing the diameter of the cooling gas supply hole or inserting porous ceramics to minimize the space where discharge can occur. However, due to the limitation of machining, the diameter of the hole is reduced to a certain diameter. (e.g., 0.1mm) There are limitations below
In addition, sufficient insulation withstand voltage cannot be obtained only by providing a ceramic porous body in the gas introduction passage.

Method used

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  • Apparatus for surpoting substrate and manufacturing mathod threrof
  • Apparatus for surpoting substrate and manufacturing mathod threrof
  • Apparatus for surpoting substrate and manufacturing mathod threrof

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Embodiment Construction

[0033] Hereinafter, the embodiments of the present invention will be described in detail with reference to the attached drawings. The present invention can be implemented in various different forms and is not limited to the embodiments described here.

[0034] In order to clearly describe the present invention, specific descriptions of parts that are not related to the essence of the present invention are sometimes omitted, and the same or similar constituent elements are sometimes given the same reference numerals throughout the specification.

[0035] In addition, when it is said that a certain part "includes" a certain constituent element, unless there is a special description to the contrary, it does not exclude other constituent elements but means that other constituent elements may also be included. The terminology used here is only for the purpose of referring to specific embodiments, and is not intended to limit the present invention. Unless otherwise defined in this specif...

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Abstract

An apparatus for supporting a substrate and a manufacturing method thereof is proposed. The apparatus includes: a base plate including at least one first gas supply hole formed therein so as to allowsupply of a temperature control gas; and an electrostatic chuck provided on the base plate to support the substrate, and including at least one second gas supply hole formed therein so as to be in communication with the at least one first gas supply hole, wherein the at least one second gas supply hole is formed before sintering of the electrostatic chuck.

Description

Technical field [0001] The present invention relates to a substrate support device for processing substrates such as semiconductor wafers and a manufacturing method thereof. Background technique [0002] Recently, in the semiconductor device manufacturing process, a large amount of plasma processing equipment is used in the process of forming a film or etching a film on a semiconductor substrate. [0003] The plasma processing equipment includes: a processing chamber provided with a space for processing a semiconductor substrate; and a substrate support device arranged inside the processing chamber and supporting the semiconductor substrate. [0004] The substrate supporting device includes a base, which is made of aluminum, a ceramic electrostatic chuck, which is arranged on the upper side of the base, and an internal electrode, which is arranged inside the ceramic electrostatic chuck. A power source for generating electrostatic force is connected to the internal electrode, and the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/683H01J37/32
CPCH01L21/6833H01J37/32715H01J37/32724H01L21/67109H01L21/6831H01L21/68757H01L21/67017H01L21/67248H02N13/00H01L21/02
Inventor 李相起李在京
Owner SEMES CO LTD
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