Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Secondary feeding device and feeding method for single crystal furnace

A technology of secondary feeding and single crystal furnace, which is applied in the direction of single crystal growth, single crystal growth, polycrystalline material growth, etc., can solve the problems of low production efficiency of single crystal silicon rods, long time of single crystal silicon growth, etc., and achieve saving Effect of drawing time, improvement of production efficiency, and avoidance of solid interstitial

Inactive Publication Date: 2020-04-03
ASIA SILICON QINGHAI +1
View PDF6 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this solution, although the secondary charging of the single crystal furnace can be realized, the secondary charging in this solution is a solid material. Therefore, when the polysilicon raw material added for the second time enters the single crystal furnace, the polysilicon raw material needs to be recharged. Melting, so that the growth time of monocrystalline silicon is long, so that the production efficiency of monocrystalline silicon rods is greatly reduced

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Secondary feeding device and feeding method for single crystal furnace
  • Secondary feeding device and feeding method for single crystal furnace
  • Secondary feeding device and feeding method for single crystal furnace

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0035] The present invention will be described in further detail below through specific implementation examples and in conjunction with the accompanying drawings.

[0036] Figure 1 to Figure 4 Shown is a secondary charging device for a single crystal furnace provided by the present invention, including a charging furnace 1 and at least one single crystal furnace 2, and a plurality of single crystal furnaces 2 are connected to the charging furnace 1 A feeding cylinder 3; a support frame 4 with a dumping function and a chemical material crucible 5 installed on the support frame 4 are installed in the chemical material furnace 1; a heater 6 is also installed in the chemical material chamber.

[0037] The chemical material furnace 1 is used to melt the polycrystalline silicon raw material; the single crystal furnace 2 is used to draw the monocrystalline silicon rod; the feeding cylinder 3 is used to feed the molten polycrystalline silicon raw material in the material chemical fur...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a secondary feeding device and feeding method for single crystal furnaces, and relates to the technical field of single crystal rod production. The secondary feeding device comprises a material melting furnace and at least one single crystal furnace, and a feeding cylinder is connected between each single crystal furnace and the material melting furnace, a support frame with a dumping function and a material melting crucible arranged on the support frame are arranged in the material melting furnace, and a heater is also arranged in the material melting chamber. According to the invention, the silicon material can be molten while the monocrystalline silicon rod is manufactured in the single crystal furnace, so that the silicon material supplemented into the single crystal furnace is molten after the silicon rod in the single crystal furnace is manufactured, the monocrystalline silicon rod can be manufactured immediately after the single crystal furnace finishes feeding, and thus the production efficiency of the monocrystalline silicon rod is greatly improved.

Description

technical field [0001] The invention relates to the technical field of single crystal ingot production, in particular to a secondary charging device and a charging method for a single crystal furnace. Background technique [0002] Single crystal furnace is a professional equipment for producing single crystal silicon rods. The production of traditional monocrystalline silicon rods is to put polycrystalline silicon raw materials into a quartz crucible and melt them at one time. After the polycrystalline silicon raw materials are melted, the monocrystalline silicon rods are drawn by the Czochralski method. Feeding amount is limited, and the maximum feeding amount is determined by the size of the quartz crucible. [0003] In the prior art, there have been relevant patent disclosures about the method of using a secondary feeding device for secondary feeding. For example, in the patent application with the application publication number CN103397389A, a method for producing a sin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/06C30B15/02
CPCC30B15/02C30B29/06
Inventor 曹玲玲杨明财郭梅珍史正斌任长春鲍守珍王茜蔡延国宗冰
Owner ASIA SILICON QINGHAI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com