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Three-dimensional memory and forming method thereof

A memory and three-dimensional technology, applied in the semiconductor field, can solve the problems affecting the electrical connection of the word line contact hole etching process, affecting the performance of the memory, and the residue of conductive materials, so as to improve the collapse phenomenon, prevent metal residue, and strengthen the support effect.

Inactive Publication Date: 2020-01-17
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Even after surface planarization treatment (such as: chemical mechanical polishing), there are still conductive materials remaining on the surface of the dielectric filling layer in the stepped area, which affects the subsequent word line contact hole etching process and its electrical connection, thereby affecting the performance of the memory

Method used

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  • Three-dimensional memory and forming method thereof

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Embodiment Construction

[0032] In order to make the above objectives, features and advantages of the present invention more obvious and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0033] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described herein, so the present invention is not limited by the specific embodiments disclosed below.

[0034] As shown in the present application and claims, unless the context clearly indicates exceptions, the words "a", "an", "an" and / or "the" do not specifically refer to the singular, but may also include the plural. Generally speaking, the terms "including" and "including" only suggest that the clearly identified steps and elements are included, and these steps and elements do not constitute an exclusive list, and th...

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Abstract

The invention relates to a three-dimensional memory and a forming method thereof. The three-dimensional memory comprises a substrate and a stacked structure located on the substrate, the stacked structure is provided with a virtual region, and the virtual region is provided with a plurality of vertical structures penetrating through the stacked structure. Each vertical structure comprises an isolation layer and a supporting body located in the isolation layer, and the supporting body is made of the undoped polycrystalline silicon. The three-dimensional memory provided by the invention can relieve the collapse problem of a stepped region.

Description

Technical field [0001] The present invention relates to the field of semiconductors, and in particular to a three-dimensional memory with a vertical structure of virtual areas and a method for forming the same. Background technique [0002] With the continuous development of 3D NAND technology, more and more layers of 3D memory can be stacked vertically, from 24 layers, 32 layers, 64 layers to more than 100 layers of high-level stacked structures, which can greatly increase the storage density and reduce The price of a unit storage unit. [0003] In the formation process of a high-level (for example, 128-layer) three-dimensional memory, a non-functional virtual area is defined in the Stair Step (SS), and some virtual holes or virtual grooves are formed in the virtual area. Typically, it is a dummy channel hole (DCH). And an Atomic Layer Deposition (ALD) method is used to deposit oxide in these holes or trenches to form a vertical structure. In some processes, this vertical struc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11551H01L27/11578H10B41/20H10B43/20
CPCH10B41/20H10B43/20
Inventor 刘慧超杨俊铖张大伟方青春
Owner YANGTZE MEMORY TECH CO LTD
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