D-A type TADF material, preparation method and application thereof

A technology of D-A and linking method, which is applied in the direction of luminescent materials, chemical instruments and methods, semiconductor/solid-state device manufacturing, etc., can solve the problems of poor film formation and difficult device preparation, and achieve low synthesis cost, strong operability, The effect of good film formation and shape stability

Active Publication Date: 2019-11-29
NANJING UNIV OF POSTS & TELECOMM
View PDF3 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Huang et al. (Huang, B., Qi, Q., Jiang, W., Tang, J. Dyes and Pigments, 2014, 111, 135-144.) used carbazole group as donor and diphenyl sulfone unit as acceptor, three different 3CzDPS were synthesized to achieve ΔE ST The minimum is 0.22eV, but its film forming property is poor
[0006] Most of the above materials are prepared based on the vacuum evaporation of small molecules, which is difficult to apply to the cheap solution method to prepare devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • D-A type TADF material, preparation method and application thereof
  • D-A type TADF material, preparation method and application thereof
  • D-A type TADF material, preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0067] The invention discloses a preparation method of a D-A type TADF material, the method comprising the following steps:

[0068] S1: Synthesis of 3BrDPS;

[0069] S2: Synthesizing the first TADF material 3CzDPS on the basis of the step S1;

[0070] S3: Synthesis of 4BrDPS

[0071] S4: Synthesizing the second TADF material 4CzDPS on the basis of the step S3.

Embodiment 1

[0073] Synthesis of 3CzDPS

[0074] S10: Preparation of 1-((3,5-dibromophenylsulfone)-3-bromobenzene (3BrDPS)

[0075] Take a 50mL three-neck flask, dry it thoroughly and wrap a layer of tinfoil on the outer surface to avoid light, mix 2.18g (10mmol) diphenyl sulfone and 4.29g (15mmol) 1,3-dibromo-5,5-dimethyl Add base hyne (DBH) into the three-necked flask, pump out three times quickly, slowly add 25mL of concentrated sulfuric acid dropwise under nitrogen atmosphere, stir at room temperature for 1 hour, slowly raise the temperature to 80°C, and continue the reaction for two hours before stopping. After cooling to room temperature, pour the reacted solution into 250 mL of ice water, filter the obtained white precipitate, wash with saturated brine and dry, and precipitate with dichloromethane / methanol to obtain a white solid 3BrDPS, white solid 3BrDPS3.59g , and the yield was 79.8%.

[0076] The common bromination method of aromatic compounds usually adopts Br 2 and N-bromos...

Embodiment 2

[0086] Synthesis of 4CzDPS

[0087]S30: Preparation of 1-((3,5-dibromophenylsulfone)-3,5-dibromobenzene (4BrDPS)

[0088] Take a 50mL three-neck flask, dry it thoroughly and wrap a layer of tinfoil on the outer surface to avoid light, mix 2.18g (10mmol) diphenyl sulfone and 5.72g (20mmol) 1,3-dibromo-5,5-dimethyl Genhyne was quickly added to the three-necked flask, and after pumping for three times, 30 mL of concentrated sulfuric acid was slowly added dropwise under nitrogen atmosphere. After stirring at room temperature for 1 hour, the temperature was slowly raised to 80°C, and the reaction was continued for 3 hours before stopping. After cooling to room temperature, the reacted solution was slowly poured into 300 mL of ice water to obtain a white precipitate, which was filtered out, washed with saturated brine, dried, and precipitated with dichloromethane / methanol to obtain 4.75 g of white solid 4BrDPS, which produced The rate is 89.6%;

[0089] The synthetic route is show...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thermal decomposition temperatureaaaaaaaaaa
Glass transition temperatureaaaaaaaaaa
Maximum current efficiencyaaaaaaaaaa
Login to view more

Abstract

The invention discloses a D-A type TADF material, a preparation method and application thereof. The D-A type TADF material has a structural general formula shown as the specification, wherein A represents a receptor unit, D represents a donor unit, and by changing the linkage position of the donor unit on the receptor unit diphenyl sulfone, specifically two linking modes, i.e. three positions (m1,m2 and m2') and four positions (m1, m2, m1' and m2') respectively, two D-A type TADF materials can be obtained. The two materials have high fluorescence quantum efficiency, good film-forming properties and morphology stability; the good carrier transport capacity facilitates the injection and transport of carriers; at the same time, the materials have appropriate HOMO and LUMO energy levels, so that the device energy level can be better matched. The material has good application prospects in OLED, and the synthesis method of the material is simple, the operability is strong and the synthesiscost is low.

Description

technical field [0001] The invention relates to a D-A type TADF material and its preparation method and application, which can be used in the technical field of organic compound synthesis. Background technique [0002] Organic electroluminescent devices (OLEDs) have the advantages of low cost, low power consumption, bendability, rich colors, wide viewing angle, etc., and are widely used in solid-state lighting, flat panel display and other fields. At present, the research on OLEDs is getting more and more in-depth, but it is still a difficult problem to prepare high-efficiency and stable devices by low-cost solution method. [0003] At present, heavy metal complex materials are mostly used in the preparation of high-efficiency devices, but heavy metal complexes cause great environmental pollution and high cost. Recently Adachi proposed the concept of TADF, using pure organic materials to construct highly efficient luminescent molecules, providing an option for designing mol...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C07D209/86C09K11/06H01L51/54
CPCC07D209/86C09K11/06C09K2211/1029C09K2211/1007H10K85/6572
Inventor 叶尚辉项太李洁肖燏萍周舟黄维
Owner NANJING UNIV OF POSTS & TELECOMM
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap