Research method for quantitative formation of internal spherical defects of three-dimensional photonic crystal

Abstract

The invention particularly relates to a research method for quantitative formation of internal spherical defects of a three-dimensional photonic crystal based on surface energy action. The surface ofthe three-dimensional photonic crystal is provided with two-dimensional array cylindrical holes, and the research method comprises the following steps: step 1, establishing a phase field model of thethree-dimensional photonic crystal; step 2, establishing a system surface energy equation; and step 3, selecting the diameter D and the aperture distance Ds of the two-dimensional array cylindrical holes to be unchanged, continuously changing the depth H of the cylindrical holes, and adjusting the limit conditions of H / D to obtain the quantitative relationship between the system surface energy ofthe three-dimensional photonic crystal and the formed spherical defect cavity. According to the invention, the thermal diffusion motion of three-dimensional photonic crystal medium particles is utilized. The research on the quantitative forming of the spherical defects in the photonic crystal is realized under the action of the surface energy of the system, the internal relation between the surface energy E of the system and the number N of the spherical defect cavities is established, and a new idea method is provided for the stable forming of the internal microstructure of the three-dimensional photonic crystal.

Description

technical field [0001] The invention belongs to the technical field of micro-nano structure research, and in particular relates to a research method for quantitative molding of spherical defects inside a three-dimensional photonic crystal based on surface energy effects. Background technique [0002] With the continuous improvement of the integration of silicon-based microelectronic components, the line width of the device process is approaching the theoretical limit, and the microelectronic technology using electrons as information carriers will soon face an insurmountable bottleneck. Therefore, integrated optoelectronics using photons as information carriers has attracted more and more attention at home and abroad. Among them, silicon-based photonic crystal devices, which inherit the mature silicon-based processing technology of modern large-scale integrated circuits and have the ability of photonic crystals to perfectly control light, have naturally become the hotspot and...

AI Technical Summary

Problems solved by technology

The more important problem is that the preparation of three-dimensional photonic crystals is quite difficult, especially when it is necessary to artificially introduce specific defect structures into three-dimensional photonic crystals. Under the current conditions, there is no mature manufacturing process and means.

Images