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Solvent, method and application for preparing high-performance metal halide perovskite thin film

A perovskite and perovskite precursor technology, applied in the field of microelectronics, can solve problems such as unfavorable development and commercialization of perovskite devices, general perovskite film quality, and increased production costs, and achieve appropriate solvent volatility. , easy to control, low cost effect

Active Publication Date: 2022-03-29
XIAN JIAOTONG LIVERPOOL UNIV
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Problems solved by technology

The solution one-step process is simple, but the quality of the perovskite film prepared is average. Although other methods do improve the quality and repeatability of the perovskite film, the process is complicated, resulting in a significant increase in production costs, which is not conducive to perovskite devices. development and commercialization of

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  • Solvent, method and application for preparing high-performance metal halide perovskite thin film
  • Solvent, method and application for preparing high-performance metal halide perovskite thin film
  • Solvent, method and application for preparing high-performance metal halide perovskite thin film

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Embodiment 1

[0031] DMF and GBL are two organic solvents with quite different properties. The boiling point of DMF is relatively low at 153 °C, and the polarity is relatively large at 6.40 D. The ability to form hydrogen bonds and coordinate with metals is very strong. GBL has a relatively high boiling point of 204 °C and a relatively low polarity of 4.12 D, which can form hydrogen bonds, but its coordination ability with metals is relatively weak. The quality of perovskite films directly depends on the type of solvent, the properties of the solvated intermediates, and the interaction between the solvent and the solvated intermediates, and the above two solvents have defects in the preparation of perovskite films by themselves.

[0032] In this example, scanning electron microscopy (SEM) and ultraviolet-visible spectroscopy (UV-Vis) were performed on perovskite films prepared from perovskite precursor solutions with different solvent ratios. like Figure 1a , Figure 1b and Figure 1c A...

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Abstract

A solvent, method and application for preparing a high-performance metal halide perovskite thin film belong to the field of microelectronic technology. The solvent for preparing the high-performance metal halide perovskite thin film includes 3 parts of DMF and 1-2 parts of GBL in parts by volume. The invention can effectively regulate the morphology of the perovskite thin film, improve the performance, efficiency and stability of the device, and has the characteristics of simple and easy method, low cost, strong controllability and the like when used in industrial production.

Description

technical field [0001] The invention relates to a technology in the field of microelectronics, in particular to a solvent, a method and an application for preparing a high-performance metal halide perovskite thin film. Background technique [0002] In recent years, metal halide perovskite films have attracted worldwide attention due to their excellent optoelectronic properties, low cost, and facile fabrication process. From the initial three-dimensional perovskite structure to the current one-dimensional and two-dimensional perovskite quantum dots, nanowires, nanoplates and other structures with various elemental compositions, the application of perovskite materials has also expanded from solar cells to laser emission. devices, light-emitting diodes, thermoelectric devices, photodetectors, etc. Devices based on perovskite thin films not only have impressive high performance, but also have low cost and simple production and processing technology, so they have great potential...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/54H01L51/56H01L51/46H01L51/48H01L35/24H01L35/34
CPCY02E10/549
Inventor 王瑞瑶闫天昊
Owner XIAN JIAOTONG LIVERPOOL UNIV
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