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A SIMS-optimized detection method for the concentration and distribution of trace impurity elements in Aln

A technology for trace impurities and impurity elements, applied in the field of SIMS optimization detection

Active Publication Date: 2020-07-31
UNIV OF SCI & TECH BEIJING
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

However, there is currently no detection method or means that can detect trace impurity elements in AlN with high precision.

Method used

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  • A SIMS-optimized detection method for the concentration and distribution of trace impurity elements in Aln
  • A SIMS-optimized detection method for the concentration and distribution of trace impurity elements in Aln
  • A SIMS-optimized detection method for the concentration and distribution of trace impurity elements in Aln

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Embodiment

[0040] Such as figure 1 Shown, according to the SIMS optimization detection method of the present invention comprises:

[0041] Step S1, transferring graphene on the sample surface.

[0042] Among them, the graphene transferred on the surface of the sample contributes to the proportion of secondary ions in the sputtering product obtained by sputtering in the subsequent steps, and can greatly improve the ordinate intensity in the subsequent mass spectrogram (can increase by about two orders of magnitude ), which helps to improve the precision and accuracy of the detection results.

[0043] Optionally, before step S1, the surface of the sample may also be cleaned with acetone and absolute ethanol.

[0044]Optionally, in step S1, the method of transferring graphene is a mechanical peeling method, coating graphite on the tape, repeatedly dipping the tape to make the graphite evenly adhere to the surface of the tape, and sticking the uniformly attached tape to the AlN surface, at...

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Abstract

The invention discloses an SIMS optimization detection method for trace impurity element concentration and distribution in AlN, and belongs to the technical field of material detection. The method comprises the steps of transferring graphene on the surface of a sample; placing the sample subjected to the graphene transfer in a sample chamber of a secondary ion mass spectrometer, and carrying out vacuumizing; introducing oxygen into the sample chamber; sputtering secondary ions from the sample; adjusting the pulse width of an extraction voltage and the number of analyzed frames in each cycle period; collecting the secondary ions; analyzing the secondary ions to obtain a mass spectrogram and a secondary ion depth profile chart; and obtaining a detection result of trace impurity elements in the sample. According to the technical scheme, high-precision detection can be carried out on the trace impurity element concentration and distribution in the AlN; various types of the trace impurity elements can be detected; the volume concentration detection limit reaches the ppb level; the test precision of the impurity elements can reach below 10%; and the resolution of impurity element distribution is less than 10 nm.

Description

technical field [0001] The invention relates to the technical field of material detection, in particular to a SIMS optimized detection method for the concentration and distribution of trace impurity elements in AlN. Background technique [0002] AlN is the direct bandgap semiconductor material with the widest bandgap among all III-V semiconductor materials (bandgap width Eg=6.2eV), and the emission wavelength of the interband transition can enter the deep ultraviolet band. Compared with other semiconductor materials, AlN has many advantages: First, the physical characteristics of AlN determine its great potential in many application fields. The ultra-wide bandgap of AlN makes it an ideal material for the preparation of ultraviolet and deep ultraviolet optoelectronic devices. The ultra-wide bandgap AlN can also be used as a matrix material for other luminous bodies. Recent studies have also shown that AlN doped with Ga, Mg and other metals has Ferromagnetism and semi-metalli...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/62
CPCG01N27/62
Inventor 齐俊杰卫喆胡超胜李志超许磊
Owner UNIV OF SCI & TECH BEIJING
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