Chip temperature control system, chip temperature control method and reaction chamber

Abstract

The invention provides a wafer temperature control system, a wafer temperature control method, and a reaction chamber. The wafer temperature control system includes a chuck for carrying a wafer, a heating device arranged in the chuck for heating the wafer, and a heating device for heating the wafer. The conveying device for conveying the heat exchange gas in the gap between the wafer and the chuck, the conveying device includes a conveying pipeline, and the conveying pipeline is used to convey the heat exchanging gas to the gap between the wafer and the chuck; There are temperature controllers for heating or cooling the heat exchange gas in the delivery line so that the heat exchange gas entering the gap between the wafer and the chuck reaches the target temperature. The wafer temperature control system provided by the invention can not only increase the temperature control speed of the wafer and increase the production capacity, but also can improve the accuracy of the wafer temperature control, thereby improving the uniformity of the process.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a wafer temperature control system, a wafer temperature control method and a reaction chamber. Background technique [0002] In the process of manufacturing integrated circuits, especially in the process of plasma etching (ETCH), physical vapor deposition (PVD), chemical vapor deposition (CVD), etc., in order to fix, support and transfer the wafer (Wafer) and realize To control the temperature of the wafer, an electrostatic chuck (Electro Static Chuck, ESC) is often used. Typically, the temperature of the wafer is controlled using a heater installed inside the electrostatic chuck. And, no matter what method is used to heat the wafer, it is necessary to pass a certain pressure of heat exchange gas, such as helium, into the gap between the upper surface of the electrostatic chuck and the lower surface of the wafer, so as to realize the gap between the electrost...

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Problems solved by technology

[0004] As the above heat exchange gas consumes heating power, this affects the temperature control speed of the wafer, thereby reducing the throughput

Moreover, in the above-mentioned stable ignition stage, the wafer is heated by the heater and the plasma at the same time, which will cause the wafer temperature to exceed the process target temperature T2, that is, the problem of temperature overshoot will occur, thereby affecting the process uniformity

It can be seen that the accuracy of wafer temperature control is low when the wafer is heated by the heater and the plasma simultaneously.

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