Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of low pinhole occurrence rate high insulation matt black polyimide film and preparation method thereof

A technology of black polyimide and occurrence rate, which is applied in the field of low pinhole occurrence rate and high insulation matt black polyimide film and its preparation, can solve the problem of low insulation of matt black PI film and cannot solve the problem of consumers. It can reduce the generation of pinholes and air bubbles, improve the insulation, and reduce the specific surface area.

Active Publication Date: 2021-03-05
GUILIN ELECTRICAL EQUIP SCI RES INST
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It can be seen that the method described in the above invention cannot solve the needs of consumers in the prior art
[0007] Therefore, how to solve the low insulation of matt black PI film and reduce the incidence of pinholes and air bubbles has become a difficult problem for the quality improvement of matt black PI film products in my country.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of low pinhole occurrence rate high insulation matt black polyimide film and preparation method thereof
  • A kind of low pinhole occurrence rate high insulation matt black polyimide film and preparation method thereof
  • A kind of low pinhole occurrence rate high insulation matt black polyimide film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] 1) Preparation of black filler dispersion:

[0040] 1.1) Mix 4.2kg carbon black (primary particle size is 20nm) and 38kg DMAc evenly, use high-speed shearing machine to shear and disperse (rotating speed is 2000r / min, dispersion time is 1h), and then use homogenizer to disperse (pressure is 50MPa, and the homogenization time is 30min), to obtain a black dispersion, for subsequent use;

[0041] 1.2) Mix 4.2kg of silicon dioxide (average particle size of 4 μm) and 24kg of DMAc evenly, place in a high-speed shearing machine and shear and disperse at a speed of 3000r / min for 3 hours to obtain a white dispersion, which is set aside;

[0042] 1.3) Mix the black dispersion with the white dispersion, place the resulting mixture in a high-speed shear, add 85g of n-butyl titanate, shear and disperse at a speed of 2000r / min for 10h, and then place it in an ultrasonic device for ultrasonication Disperse for 2 hours, and finally add 420g of PAA-1 resin, and shear and stir at a spee...

Embodiment 2

[0046] Repeat Example 1, the difference is:

[0047] In step 1.3), the non-metal alkoxide is ethyl orthosilicate, and the addition amount of PAA-1 resin is 84g;

[0048] Step 2) in, the total amount of PMDA is 0.1994mol;

[0049] In steps 1) and 2), the polar aprotic solvent is changed to NMP.

Embodiment 3

[0051] Repeat Example 1, the difference is:

[0052] In step 1.1), the primary particle size of carbon black is 300nm;

[0053] In step 1.3), the non-metal alkoxide is ethyl orthosilicate, and the addition of PAA-1 resin is 670g.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
dielectric strengthaaaaaaaaaa
dielectric strengthaaaaaaaaaa
Login to View More

Abstract

The invention discloses a low pinhole occurrence rate and high insulation matt black polyimide film and a preparation method thereof. The preparation method comprises the following steps: 1) mixing a black dispersion in which the solute is carbon black and a white dispersion in which the solute is a matting agent, performing shear dispersion and / or ultrasonic dispersion on the resulting mixed solution, adding non-metal alkoxide and Polyamic acid resin solution, after shear dispersion and / or ultrasonic dispersion to obtain a black filler dispersion; 2) In a polar aprotic solvent, add diamine and dianhydride in a molar ratio of 1:0.990‑0.998 to react Add black filler dispersion to polyamic acid resin solution, stir well and add or not add stabilizer, stir well to obtain matt black PAA resin solution; 3) The obtained matt black PAA resin solution is further made into matt black PI film . The film prepared by the method of the invention has excellent insulation properties, better mechanical properties and lower pinhole and air bubble rates.

Description

technical field [0001] The invention relates to a polyimide film, in particular to a matte black polyimide film with low pinhole occurrence rate and high insulation and a preparation method thereof. Background technique [0002] In recent years, matte black polyimide (PI) films have been used to cover electronic materials such as flexible circuit boards, electronic components, and lead frames of integrated circuit packages to prevent visual inspection and tampering. Matte black PI film is usually added carbon black with strong tinting power to PI film to make the film opaque black. Carbon black is composed of carbon, the arrangement of carbon atoms is similar to that of graphite, and it has electrical conductivity. The nano-scale carbon black network chains are tightly packed, with large specific surface area and many particles per unit mass. It is easy to form a chain conductive structure in polymers. Therefore, in addition to blackening the film, the addition of nano-scal...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C08L79/08C08K3/04C08K3/22C08K3/36C08J5/18C08G73/10
CPCC08G73/1042C08G73/105C08G73/1067C08G73/1071C08J5/18C08J2379/08C08K3/04C08K3/22C08K3/36C08K2003/2241C08K2201/011
Inventor 青双桂白小庆姬亚宁冯羽风白蕊全光好
Owner GUILIN ELECTRICAL EQUIP SCI RES INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products