Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A semiconductor tube protection circuit and method

A semiconductor tube and protection circuit technology, which is applied in the field of semiconductor tube protection circuits, can solve the problems of MOS tubes lacking circuit overload capacity, MOS tubes are easy to be broken down, etc., and achieve the effect of protecting against breakdown and increasing the pressure resistance

Active Publication Date: 2021-12-14
上海领矽半导体有限公司
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, MOS tubes lack circuit overload capability, and MOS tubes are easily broken down

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A semiconductor tube protection circuit and method
  • A semiconductor tube protection circuit and method
  • A semiconductor tube protection circuit and method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] When the switch of the MOS tube is controlled by the relay, the MOS tube drives the inductive load. Due to the instantaneous opening of the relay, the dV / dt is too large, that is, the instantaneous change of the voltage is too large, so that the voltage change rate accumulated on the MOS tube is too fast, causing the parasitic transistor of the MOS tube to break down.

[0046] Such as figure 2 As shown, it is an existing MOS tube protection circuit.

[0047] When the relay is turned off, due to the start-up period of the relay, a huge transient voltage (dV / dt) will be generated, forming a huge surge phenomenon. Since the MOS tube just drives the inductive load, this high transient voltage will activate the MOS The parasitic transistor contained in the tube (the diode connected between the drain of the MOS tube and the source of the MOS tube, when a large instantaneous reverse current is generated in the circuit, it can be derived through this diode, protecting the MOS...

Embodiment 2

[0068] Based on embodiment 1, the difference from embodiment 1 is:

[0069] Such as figure 1 with Figure 4 Shown is a circuit diagram of a semiconductor tube protection circuit of the present invention.

[0070] Since the power supply voltage of the circuit is different in different application scenarios, in order to adapt to more different power supply voltages, the Zener diode 21 in Embodiment 1 is improved into a voltage stabilizing unit 24 .

[0071] The voltage stabilizing circuit 2 includes a voltage stabilizing unit 24 and the relay 22 .

[0072] The voltage stabilizing unit 24 is connected in parallel with the relay 22 .

[0073] The high potential end of the voltage stabilizing unit 24 is connected to the low potential end of the load unit 1 , and the low potential end of the voltage stabilizing unit 24 is grounded.

[0074] The voltage stabilizing unit 24 includes at least two voltage stabilizing subunits 241 connected in series. The voltage stabilizing subunit ...

Embodiment 3

[0079] Based on Embodiment 1, this embodiment is a design method corresponding to Embodiment 1.

[0080] Such as Figure 5 As shown, it is a flow chart of a semiconductor tube protection method corresponding to Embodiment 1.

[0081] A semiconductor tube protection method, comprising:

[0082] S1, adding the voltage-zener diode 21 in the circuit to divert current, and divert most of the instantaneous voltage generated after the relay is turned on to the system ground.

[0083] The Zener diode 21 works by utilizing the property that the breakdown region of the PN junction has a stable voltage. The characteristic of the Zener diode is that after breakdown, the voltage at both ends remains basically unchanged. In this way, when the Zener tube is connected to the circuit, if the voltage of each point in the circuit changes due to fluctuations in the power supply voltage or other reasons, the voltage at both ends of the load will remain basically unchanged. After the reverse br...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the field of semiconductor circuits, and in particular relates to a semiconductor tube protection circuit and method. The present invention includes a power supply voltage, a load circuit, a voltage stabilizing circuit and a semiconductor tube; the power supply voltage is connected to the high potential end of the load circuit, and the low potential end of the load unit is connected to the high potential end of the voltage stabilizing circuit The low potential end of the voltage stabilizing circuit is grounded, the high potential end of the semiconductor tube is connected to the high potential end of the voltage stabilizing circuit, and the low potential end of the semiconductor tube is grounded. The invention uses a voltage-stabilizing diode to drain current, and a transistor is added between the relay and the semiconductor tube as a buffer, which increases the pressure resistance of the semiconductor tube and effectively protects the semiconductor tube from being broken down.

Description

technical field [0001] The invention belongs to the field of protection circuits, in particular to a semiconductor tube protection circuit and method. Background technique [0002] MOS (Metal Oxide Semiconductor) tube is a metal (metal) - oxide (oxide) - semiconductor (semiconductor) field effect transistor, or metal - insulator (insulator) - semiconductor. [0003] The MOS circuit is a unipolar integrated circuit, also known as a MOS integrated circuit. It is made of a metal-oxide semiconductor field effect transistor (Metal Oxide Semi-conductor Field Effect Transistor, abbreviated as MOSFET). Convenient, high integration, low power consumption. [0004] The most notable feature of MOS tubes is their good switching characteristics, so they are widely used in circuits that require electronic switches, such as switching power supplies and motor drives, and lighting dimming. [0005] In recent years, semiconductor devices have developed rapidly. MOS tubes have become the mai...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H03K17/08H03K17/74
CPCH03K17/08H03K17/74
Inventor 刘正
Owner 上海领矽半导体有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com