Coating production method for polycrystalline silicon ingot quartz crucible

The technology of a quartz crucible and a production method is applied in the field of coating production of a polycrystalline silicon ingot quartz crucible, and can solve problems such as affecting the compactness of the coating and affecting the quality of the ingot.

Inactive Publication Date: 2018-08-28
JINKO SOLAR CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Based on this, the purpose of the present invention is to solve the problem in the prior art that due to the presence of many particles on the surface of the existing silicon nitride coating, which affects the compactness of the coating, and then brings impurities into the silicon material in the quartz crucible. Problems Affecting the Quality of Ingots

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  • Coating production method for polycrystalline silicon ingot quartz crucible
  • Coating production method for polycrystalline silicon ingot quartz crucible
  • Coating production method for polycrystalline silicon ingot quartz crucible

Examples

Experimental program
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Effect test

Embodiment 1

[0037] The coating preparation method of the polysilicon ingot quartz crucible proposed by the present embodiment is as follows:

[0038] (1) First weigh 800g of silicon nitride powder (wherein the weight ratio of silicon nitride A to silicon nitride B is 6:4), then use a measuring cylinder to measure 1500ml of deionized water and 350ml of ion-free silicon Sol.

[0039] Pour the above-mentioned silicon nitride powder, deionized water and unexampled silica sol into a container containing a stirrer. Stir rapidly at a stirring speed of 350 rpm for 5 min, and then continue stirring at a stirring speed of 260 rpm for 5 min.

[0040] (2) Put the quartz crucible on the rotary heater, start the rotary heater to heat the quartz crucible (the temperature of the inner wall of the quartz crucible can reach 140° C.). Then the distance between the spray gun of the spraying machine and the wall of the quartz crucible is controlled at 25 cm, the spray pressure is adjusted to 30 par, and the...

Embodiment 2

[0044] (1) First weigh 850g of silicon nitride powder (the weight ratio of silicon nitride A to silicon nitride B is 13:7), and then measure 1500ml of deionized water and 370ml of ion-free silicon with a graduated cylinder. Sol.

[0045] Pour the above-mentioned silicon nitride powder, deionized water and unexampled silica sol into a container containing a stirrer. Stir rapidly at a stirring speed of 350 rpm for 5 min, and then continue stirring at a stirring speed of 260 rpm for 5 min.

[0046] (2) Put the quartz crucible on the rotary heater, start the rotary heater to heat the quartz crucible (the temperature of the inner wall of the quartz crucible can reach 140° C.). Then the distance between the spray gun of the spraying machine and the wall of the quartz crucible is controlled at 25 cm, the spray pressure is adjusted to 30 par, and the spraying machine is turned on for spraying.

[0047] During the spraying process, use an infrared temperature measuring gun to measure...

Embodiment 3

[0050] (1) First weigh 820g of silicon nitride powder (the weight ratio of silicon nitride A to silicon nitride B is 63:37), then measure 1350ml of deionized water and 350ml of ion-free silicon with a graduated cylinder Sol.

[0051] Pour the above-mentioned silicon nitride powder, deionized water and unexampled silica sol into a container containing a stirrer. Stir rapidly at a stirring speed of 350 rpm for 5 min, and then continue stirring at a stirring speed of 260 rpm for 5 min.

[0052] (2) Put the quartz crucible on the rotary heater, start the rotary heater to heat the quartz crucible (the temperature of the inner wall of the quartz crucible can reach 140° C.). Then the distance between the spray gun of the spraying machine and the wall of the quartz crucible is controlled at 25 cm, the spray pressure is adjusted to 30 par, and the spraying machine is turned on for spraying.

[0053] During the spraying process, use an infrared temperature measuring gun to measure the...

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Abstract

The invention discloses a coating production method for a polycrystalline silicon ingot quartz crucible. The method comprises the following steps: adding a first preset mass of silicon nitride powder,a first preset volume of deionized water and a second preset volume of ion-free silica sol into a container to carry out stirring operation to obtain silicon nitride coating, wherein the silicon nitride powder comprises a first class of silicon nitride and a second class of silicon nitride at a preset mass ratio; putting the quartz crucible on a rotary heater to carry out rotary heating to a first preset temperature; controlling a distance between a coating machine and the inner wall of the crucible of the quartz crucible as a first preset distance, and coating the quartz crucible with silicon ingot coating, wherein spraying pressure is first preset spraying pressure. According to the coating production method for the polycrystalline silicon ingot quartz crucible, the compactness of the silicon nitride coating is improved so as to improve the quality of a cast silicon ingot.

Description

technical field [0001] The invention relates to the technical field of polysilicon ingots, in particular to a coating method for a quartz crucible of polysilicon ingots. Background technique [0002] In recent years, with the gradual shortage of fuel resources, solar cells, as a new energy utilization method, have been gradually applied more and more extensively due to their clean and renewable advantages. [0003] In the preparation process of solar cells, quasi-monocrystalline silicon wafers are also a relatively common raw material for silicon wafers. At present, quasi-single crystal silicon wafers are mainly produced by casting polycrystalline ingots in quartz crucibles. Specifically, in the current polycrystalline ingot production process, the silicon material generally undergoes the following five steps in the quartz crucible: heating, melting, crystal growth, annealing and cooling. Among them, in the process of melting and growing crystals, the silicon nitride coati...

Claims

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Application Information

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IPC IPC(8): C03C17/25C03C17/22C30B28/06C30B29/06
CPCC03C17/007C03C2217/213C03C2217/281C03C2217/45C03C2217/475C03C2218/112C30B28/06C30B29/06
Inventor 冷金标龙昭钦周成谭水根周慧敏徐志群
Owner JINKO SOLAR CO LTD
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