Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Surface protection adhesive tape for semiconductor wafer backgrinding, and semiconductor wafer grinding method

A technology of grinding and protecting tape, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc. It can solve the problems that the gap cannot pass through the sensor, the sensor cannot be identified, and the gap cannot be detected to achieve heat resistance. Excellent, improved workability, and improved efficiency

Active Publication Date: 2017-12-01
FURUKAWA ELECTRIC CO LTD
View PDF14 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patented technology describes an improvement on how well a protective film called Silicone rubber covers certain areas inside a device's chip before it goes through various steps like polishing or cleanup processes that may damage them. By doing this, manufacturers are able to improve their productivity while maintaining good quality control over these damaged regions.

Problems solved by technology

This technical problem addressed in these prior arts relates to improving visual inspection quality when attaching a temporary support called a cover glass onto a semiconduum wafer without causing damage thereto. Additionally, reducing defectivity caused by residual tonings after cleaning the workpiece's surface requires controlling the amount of force applied while maintaining accuracy in the attachment of the temporary support.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Surface protection adhesive tape for semiconductor wafer backgrinding, and semiconductor wafer grinding method
  • Surface protection adhesive tape for semiconductor wafer backgrinding, and semiconductor wafer grinding method
  • Surface protection adhesive tape for semiconductor wafer backgrinding, and semiconductor wafer grinding method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0123] In 100 parts by mass of ethylene-vinyl acetate copolymer (EVA) resin A containing 6.0% by mass of the vinyl acetate component, 0.6 parts by mass of copper phthalocyanine blue containing the blue pigment 5.0% by mass and vinyl acetate were dry blended The content of the ester component is 6.0% by mass of ethylene-vinyl acetate copolymer (EVA) resin B. The extrusion molding was performed by an extrusion molding machine, thereby obtaining a base film A having a thickness of 165 μm and a back surface roughness Rz=1.2 μm.

[0124] Mixing in proportions of 2 mol% of methacrylic acid, 50 mol% of 2-ethylhexyl acrylate, 30 mol% of 2-hydroxyethyl acrylate, and 18 mol% of methyl acrylate, adding 0.2 mass per 100 mass parts of total monomers Parts of azobisisobutyronitrile were copolymerized in an ethyl acetate solution at a temperature of 70°C in a reaction vessel replaced with nitrogen, thereby obtaining a polymer solution with a weight average molecular weight of 800,000. In this ...

Embodiment 2

[0127] In 100 parts by mass of ethylene-vinyl acetate copolymer (EVA) resin A containing 6.0% by mass of the vinyl acetate component, 0.3 parts by mass of copper phthalocyanine blue containing the blue pigment 5.0% by mass and vinyl acetate were dry blended The content of the ester component is 6.0% by mass of ethylene-vinyl acetate copolymer (EVA) resin B. Extrusion molding was performed by an extrusion molding machine, thereby obtaining a base film B having a thickness of 165 μm and a surface roughness of the back surface Rz=0.7 μm.

[0128] Mixing is carried out in a proportion of 1 mol% of methacrylic acid, 22 mol% of 2-hydroxyethyl acrylate, and 77 mol% of butyl acrylate, and 0.3 parts by mass of azobisisobutyronitrile is added to 100 parts by mass of the total monomers. In the reaction vessel replaced with nitrogen, copolymerization was carried out in an ethyl acetate solution at a temperature of 70°C to obtain a polymer solution with a weight average molecular weight of 30...

Embodiment 3

[0131] In 100 parts by mass of ethylene-vinyl acetate copolymer (EVA) resin C having a vinyl acetate content of 10.0% by mass, 0.6 parts by mass of copper phthalocyanine blue containing the blue pigment 5.0% by mass and vinyl acetate were dry blended The content of the ester component is 6.0% by mass of ethylene-vinyl acetate copolymer (EVA) resin B. The extrusion molding was performed by an extrusion molding machine, thereby obtaining a base film C having a thickness of 100 μm and a surface roughness Rz of the back surface Rz=3.7 μm.

[0132] Mixing is carried out in a proportion of 2 mol% methacrylic acid, 29 mol% 2-hydroxyethyl acrylate, and 69 mol% 2-ethylhexyl acrylate, and 0.2 parts by mass of azobisiso is added relative to 100 parts by mass of the total monomers. Nitrile was copolymerized in an ethyl acetate solution in a reaction vessel replaced with nitrogen at a temperature of 70°C to obtain a polymer solution with a weight average molecular weight of 230,000. In this ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Surface roughnessaaaaaaaaaa
Thicknessaaaaaaaaaa
Melting pointaaaaaaaaaa
Login to View More

Abstract

Provided are: a surface protection adhesive tape for semiconductor wafer backgrinding, said tape being composed of a substrate and an adhesive layer that is provided on one surface of the substrate, wherein the surface roughness of the substrate surface on which the adhesive layer is not formed is Rz = 0.7-5.0 [mu]m, the total light transmittance of the surface protection adhesive tape for semiconductor wafer backgrinding at a wavelength of 500-600 nm is 40-80%, the difference between the color difference ([delta]EM) of a mirror wafer and the color difference ([delta]ET) when the surface protection adhesive tape for semiconductor wafer backgrinding is bonded to the mirror wafer is [delta]ET-[delta]EM > 6.5, and the surface protection adhesive tape for semiconductor wafer backgrinding is bonded to the surface of a semiconductor wafer having a notch; and a semiconductor wafer grinding method using said adhesive tape.

Description

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Owner FURUKAWA ELECTRIC CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com