A kind of preparation method of highly efficient sulfur-doped zinc oxide nanomaterial

A zinc oxide nanometer and sulfur doping technology is applied in the field of preparation of zinc oxide nanomaterials, which can solve the problems of poor enhancement effect of fluorescent materials, difficult to achieve effective doping, and needs to be improved, so as to be beneficial to environmental protection and suitable for large-scale applications. The effect of large-scale industrial production and easy operation

Active Publication Date: 2020-05-19
JIANGXI SCI & TECH NORMAL UNIV
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Problems solved by technology

[0005] There are many preparation methods of ZnO, which has the advantages of simple preparation process and low cost, but the enhancement effect of existing ZnO fluorescent materials is poor, and the cost is high, which needs to be improved
Although the metal cation doping of zinc oxide has been widely realized, the anion doping, especially the doping of sulfur element, has not attracted the attention of relevant researchers, because the Bohr radius of S and O is quite different, so it is difficult to realize effective doping

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  • A kind of preparation method of highly efficient sulfur-doped zinc oxide nanomaterial
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  • A kind of preparation method of highly efficient sulfur-doped zinc oxide nanomaterial

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preparation example Construction

[0034] Based on the above ideas, the present invention provides a method for preparing a highly efficient sulfur-doped zinc oxide nanomaterial, comprising the following steps:

[0035] S1: Preparation of nano zinc oxide precursor solution by precipitation method;

[0036] S2: At room temperature, add thioacetamide and ethylenediaminetetraacetic acid successively to the above-mentioned nano-zinc oxide precursor solution, and react at room temperature, and the reaction time is 1 to 5 hours;

[0037] S3: After the reaction is completed, the precipitate is separated, washed and dried to obtain white solid particles;

[0038] S4: heat-treating the above-mentioned white solid particles.

[0039] According to the present invention, the specific steps of preparing the nano-zinc oxide precursor solution in step S1 are: at room temperature, dissolving the zinc salt into water to form a salt solution, then adding the alkali metal hydroxide solution dropwise to the salt solution, stirrin...

Embodiment 1

[0059] A preparation method of highly efficient sulfur-doped zinc oxide nanomaterials, the steps are:

[0060] (1) At room temperature, dissolve zinc acetate in water to prepare 0.2mol / L Zn(CH 3 COO) 2 2H 2 O solution;

[0061] (2) At room temperature, prepare a NaOH solution with a concentration of 0.2mol / L;

[0062] (3) At room temperature, NaOH solution was quickly added dropwise to Zn(CH 3 COO) 2 2H 2 In the O solution, stir and mix uniformly to obtain a suspension, which is the nano-zinc oxide precursor solution; wherein Zn(CH 3 COO) 2 2H 2 The volume ratio of O solution and NaOH solution is 1:1;

[0063] (4) At room temperature, prepare a thioacetamide solution with a concentration of 0.2mol / L;

[0064] (5) At room temperature, quickly drop the above-mentioned thioacetamide solution into the above-mentioned suspension, and stir to obtain a white suspension solution;

[0065] (6) Prepare an EDTA solution with a concentration of 0.01mol / L, pour the EDTA solution...

Embodiment 2

[0072] A preparation method of highly efficient sulfur-doped zinc oxide nanomaterials, the steps are:

[0073] (1) Dissolve zinc chloride in water to prepare 0.1mol / L zinc chloride solution at room temperature;

[0074] (2) At room temperature, prepare a NaOH solution with a concentration of 0.1mol / L;

[0075] (3) At room temperature, quickly drop the NaOH solution into the zinc chloride solution, stir, and mix evenly to obtain a suspension, which is the nano-zinc oxide precursor solution; the volume ratio of the zinc chloride solution to the NaOH solution is 1:0.5;

[0076] (4) At room temperature, prepare a thioacetamide solution with a concentration of 0.1mol / L;

[0077] (5) At room temperature, quickly drop the above-mentioned thioacetamide solution into the above-mentioned suspension, and stir to obtain a white suspension solution;

[0078] (6) Prepare an EDTA solution with a concentration of 0.01mol / L, pour the EDTA solution into the white suspension solution, and mix...

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Abstract

The invention provides a high-efficiency sulfur-doped zinc oxide nano material preparation method, which comprises the following steps: S1, utilizing a precipitation method to prepare a nano zinc oxide precursor solution; S2, sequentially adding thioacetamide and ethylene diamine tetraacetic acid into the nano zinc oxide precursor solution to react; S3, separating precipitate out after reaction is finished and cleaning and drying to obtain white solid particles; S4, thermally treating the white solid particles. According to the preparation method disclosed by the invention, the ethylene diamine tetraacetic acid is utilized to enable the thioacetamide to be a lot doped into the nano zinc oxide precursor solution; thus, high-concentrate sulfur doping in ZnO is achieved, and a defect structure and surface free energy of a ZnO nano material are changed; furthermore, fluorescent performance of the zinc oxide nano material is greatly enhanced.

Description

technical field [0001] The invention relates to a preparation method of zinc oxide nanometer material, in particular to a preparation method of highly efficient sulfur-doped zinc oxide nanometer material. Background technique [0002] In recent years, wide-bandgap semiconductor materials have attracted considerable attention due to their potential applications in high-power and high-frequency devices, short-wavelength light-emitting diodes, lasers, and related devices. At the same time, zinc oxide (ZnO), as the third-generation semiconductor material, is a new type of inorganic product facing the 21st century, with many excellent properties such as large specific surface area, fast electron transport capacity, large band gap and good UV shielding performance. , has become the focus of various industries. [0003] Zinc oxide (ZnO) is a semiconductor material with direct bandgap and wide bandgap. Its bandgap is 3.37eV and its crystal structure is hexagonal wurtzite structure....

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/56
CPCC09K11/565
Inventor 多树旺于志泳陈忠张豪
Owner JIANGXI SCI & TECH NORMAL UNIV
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