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Broad-spectrum extreme ultraviolet multilayer film design method based on improved quantum evolutionary algorithm

A quantum evolutionary algorithm and design method technology, applied in the field of extreme ultraviolet multilayer film, can solve the problems of long time consumption, low solution efficiency and low solution accuracy

Active Publication Date: 2020-07-03
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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Problems solved by technology

[0004] The purpose of the present invention is to solve the problems of long time-consuming, low solution efficiency and low solution accuracy of the existing wide-spectrum extreme ultraviolet multilayer film design method, and provide a wide-spectrum extreme ultraviolet multilayer film design method based on an improved quantum evolution algorithm

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  • Broad-spectrum extreme ultraviolet multilayer film design method based on improved quantum evolutionary algorithm
  • Broad-spectrum extreme ultraviolet multilayer film design method based on improved quantum evolutionary algorithm
  • Broad-spectrum extreme ultraviolet multilayer film design method based on improved quantum evolutionary algorithm

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Embodiment 1

[0130] The four-layer model of Mo / Si multilayer film is used to design the theoretical film system. Since the diffusion between the Mo layer and the Si layer is weak, the diffusion layer MoSi 2 The thickness of the constant and the chemical properties are regarded as fixed, and the diffusion layer MoSi of the Mo layer on the Si layer is set 2 The thickness of the Si layer is 1.0nm, the diffusion layer MoSi on the Mo layer 2 The thickness is 0.5nm. Si, Mo, and MoSi 2 The densities of all adopt the ideal parameter values, and introduce the corresponding atomic scattering factor data from the literature (B.L.Henke, E.M.Gullikson, and J.C.Davis, At.DataNucl.Data Tables 54, (1993)) to calculate. During the design process, the Mo layer and The thickness of the Si layer is solved, and the film structure is detailed in figure 1 .

[0131] In this embodiment, the number of quantum population evolution times is 2000, the number of gene bits is 98, the mutation probability is 0.1, th...

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Abstract

The invention discloses a wide-spectrum extreme ultraviolet multilayer film design method based on an improved quantum evolutionary algorithm, belonging to the technical field of extreme ultraviolet multilayer films. The problems of long time consumption, low solution efficiency and low solution precision of existing design methods are solved. The design method of the present invention first performs quantum coding on the film system, then uses the evaluation function to calculate the fitness value of the quantum chromosome individual in the population, and saves the optimal film system; then judges whether the optimal film system meets the optimization criterion, if If the optimization criterion is met, the algorithm stops, and the film structure is output; if the optimization criterion is not met, the single real-number gene mutation is performed on the individual to determine whether the single real-number gene mutation of the individual is an effective evolution, and if it is an effective evolution, the quantum revolving door is used to pair The corresponding quantum probability amplitude is updated, and then the elite retention strategy is adopted to update the optimal multilayer film system until the evolution is completed. The design method has the advantages of short time consumption, high solution efficiency and solution accuracy.

Description

technical field [0001] The invention belongs to the technical field of extreme ultraviolet (EUV) multilayer films, in particular to a design method for a wide-spectrum extreme ultraviolet multilayer film based on an improved quantum evolution algorithm, and is especially suitable for wide-spectrum extreme ultraviolet multilayer films with high reflectivity the design of. Background technique [0002] Extreme ultraviolet generally refers to a special light band with a wavelength of several nanometers to tens of nanometers. There are a large number of atomic resonance lines and absorption lines in this band. Almost all materials have strong absorption and refraction of the radiation in this band. rate close to 1. Due to this strong absorption, it is very difficult to study extreme ultraviolet radiation. In 1972, E. Spiller proposed for the first time to alternately prepare a multilayer film structure of λ / 4 wave stacks by using high-refractive-index materials and low-refract...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F30/20G06N3/12
CPCG06F30/20G06N3/123
Inventor 匡尚奇谢耀
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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