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Preparation method of few-layer MoS2 thin film

A thin film and equipment technology, which is applied in the field of preparation of few-layer MoS2 thin films, can solve the problems of reducing the electrical properties of MoS2, and achieve the effect of increasing the area, reducing requirements, and increasing the area

Inactive Publication Date: 2017-07-07
ZHENGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

MoS obtained by this method 2 The film is composed of a large number of nanosheets, and the size of the nanosheets is about 200 nanometers. There are a large number of grain boundaries in this film composed of a large number of nanosheets. The existence of these grain boundaries will reduce the MoS 2 The electrical properties, therefore, the MoS prepared by this method 2 Not suitable for use in electronic devices

Method used

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  • Preparation method of few-layer MoS2 thin film
  • Preparation method of few-layer MoS2 thin film
  • Preparation method of few-layer MoS2 thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] A few-layer MoS 2 thin film preparation method to MoO 3 Powder and S powder are the precursors, and the dual-temperature zone tube furnace is the equipment. The specific steps are as follows:

[0023] (1) MoO 3 Thin film deposition: 0.1 g MoO 3 The powder (99.9%) is placed at one end of a quartz boat with a diameter of 1.5 cm and a length of about 15 cm, which will be sequentially cleaned by acetone, absolute ethanol, deionized water, and O 2 The plasma-treated 2cm×2cm Si wafer is placed upside down on the other end of the quartz boat, and the inert gas N 2 , an inert gas from MoO 3 One end of the powder flows to the other end of the substrate, for MoO 3Heating, the heating temperature is 750°C, the heating rate is 15°C / min, the holding time is 5min, the pressure is 100Pa, the flow rate of the inert gas is 100sccm, and MoO is obtained on the substrate 3 film;

[0024] (2) MoO prepared in step (1) 3 The film and 1g of S powder were placed in the two temperature z...

Embodiment 2

[0030] A few-layer MoS 2 thin film preparation method to MoO 3 Powder and S powder are the precursors, and the dual-temperature zone tube furnace is the equipment. The specific steps are as follows:

[0031] (1) MoO 3 Thin film deposition: 0.1 g MoO 3 The powder (99.9%) is placed at one end of a quartz boat with a diameter of 1.5 cm and a length of about 15 cm, which will be sequentially cleaned by acetone, absolute ethanol, deionized water, and O 2 Plasma-treated 2cm x 2cm SiO 2 / Si sheet is placed upside down on the other end of the quartz boat, and the inert gas N is introduced 2 , an inert gas from MoO 3 One end of the powder flows to the other end of the substrate, for MoO 3 Heating, the heating temperature is 650°C, the heating rate is 13°C / min, the holding time is 30min, the pressure is normal pressure, the flow rate of the inert gas is 20 sccm, and MoO is obtained on the substrate 3 film;

[0032] (2) MoO prepared in step (1) 3 The thin film and 1.3g S powder ...

Embodiment 3

[0034] A few-layer MoS 2 thin film preparation method to MoO 3 Powder and S powder are the precursors, and the dual-temperature zone tube furnace is the equipment. The specific steps are as follows:

[0035] (1) MoO 3 Thin film deposition: 0.1 g MoO 3 The powder (99.9%) is placed at one end of a quartz boat with a diameter of 1.5 cm and a length of about 15 cm, which will be sequentially cleaned by acetone, absolute ethanol, deionized water, and O 2 The plasma-treated sapphire substrate is placed upside down on the other end of the quartz boat, and the inert gas N 2 , an inert gas from MoO 3 One end of the powder flows to the other end of the substrate, for MoO 3 Heating, the heating temperature is 850°C, the heating rate is 10°C / min, the holding time is 2min, the pressure is 30Pa, the flow rate of the inert gas is 300 sccm, and MoO is obtained on the substrate 3 film;

[0036] (2) MoO prepared in step (1) 3 The thin film and 1.5 g S powder were placed in the two tempe...

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Abstract

The invention provides a preparation method of a few-layer MoS2 thin film. The preparation method adopts MoO3 powder and S powder as precursors and a two-temperature-zone tube furnace as equipment, and particularly comprises the following steps: (1) deposition of a MoO3 thin film: placing MoO3 powder at one end of a quartz boat, backing off a substrate, placing the substrate at the other end of a quartz boat, injecting an inert gas, and heating up MoO3 to obtain the MoO3 thin film on the substrate; and (2) placing the MoO3 prepared in the step (1) and S powder in two temperature zones of the two-temperature-zone tube furnace, injecting an inert gas, heating the MoO3 thin film and the S powder, and finishing vulcanization of the MoO3 thin film to obtain the MoS2 thin film. The obtained MoS2 is triangular, each triangular MoO3 is a monocrystal, and a plurality of triangles are mutually connected to form the MoS2 thin film. The MoS2 thin film with the few-layer structure has the area of about 0.7 cm*1 cm.

Description

technical field [0001] The invention belongs to the field of material preparation, in particular to a few-layer MoS 2 The method of film preparation. Background technique [0002] Graphene has a unique two-dimensional structure, and its unique properties in physics, chemistry, and mechanics have attracted great attention from scholars at home and abroad. However, graphene's lack of natural band gap limits its application in many aspects. MoS 2 With graphene layered structure and natural band gap, bulk and monolayer MoS 2 The bandgap widths of MoS are 1.29 eV and 1.9 eV, respectively, and when its thickness gradually decreases to a single layer, its bandgap changes from an indirect bandgap to a direct bandgap, which makes MoS 2 It has broad application prospects in photoelectric detection, energy storage, gas sensing, etc. In addition, since MoS 2 The single-layer and few-layer structure has the characteristics of high toughness, and it is expected to realize the integra...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455C23C16/448C23C16/30
CPCC23C16/455C23C16/305C23C16/4481
Inventor 许婷婷刘云云
Owner ZHENGZHOU UNIV
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