A Termination Structure with Complementary Field Strength of Non-depleted Junction Termination Extension and Floating Field Plate

Abstract

The invention discloses a non-depletion type junction termination extension and floating field board field intensity complementary terminal structure. The terminal structure comprises a junction termination extension, a floating field board and a supporting medium layer located between the junction termination extension and the floating field board; the junction termination extension is divided into a plurality of regions arranged at intervals; the plurality of regions form the junction termination extension; the length and interval of each region are adjusted according to voltage levels; a regional interval is left between two adjacent regions; the floating field board is arranged above the junction termination extension through the supporting medium layer; the floating field board is divided into a plurality of regions; and one floating field board region is arranged above one regional interval of the junction termination extension. According to the terminal structure of the invention, an overall electric field strength integral value is improved; a good withstand voltage effect is realized; cost and time are reduced; terminal efficiency is utilized to the greatest extent; the terminal area of a high-voltage device is decreased; and the yield of the high-voltage device is improved.

Description

technical field [0001] The disclosure of the invention relates to the field of power electronic devices, in particular to a terminal structure in which the extension of the non-depletion junction terminal and the field strength of the floating field plate complement each other. Background technique [0002] With the rapid development of power electronic devices, the structure of terminal as a protection device has been more and more widely used. High-voltage devices often use terminal structures to expand the distribution of potential lines near the main junction to avoid the electric field concentration effect here, thereby delaying the early breakdown of the device and improving the withstand voltage. [0003] In the process of realizing this technology, it is found that the prior art has at least the following problems: common junction termination extension cannot fully utilize the potential of high-voltage devices. The usual extension of the multi-region junction termin...

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Problems solved by technology

[0003] In the process of realizing this technology, it is found that the existing technology has at least the following problems: ordinary junction termination extension does not fully utilize the potential of high voltage devices

Under the requirement of a certain terminal area, it is difficult for the commonly used terminal structure to fully obtain an ideal surface electric field distribution under a high-voltage structure.

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