High-responsivity photodetectors based on moisture-resistant organic-inorganic hybrid perovskite materials

A technology of perovskite materials and photodetectors, which can be used in the manufacture of semiconductor devices, electrical solid state devices, semiconductor/solid state devices, etc., can solve problems such as high photoresponsivity, reduction of photodetector photocurrent, and insulation characteristic charge transmission barriers. , to achieve high responsivity and improve the effect of carrier transport ability

Active Publication Date: 2019-08-23
ZHEJIANG UNIV
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the introduction of the second amine source, the hybrid perovskite has a two-dimensional structural feature, which tends to grow along the substrate crystal, so that the second amine source is arranged parallel to the substrate, and its insulating properties become perpendicular to the substrate. The hindrance of charge transport in the direction of the substrate greatly reduces the photocurrent of photodetectors using this type of material as the active layer, thus making it impossible to achieve high photoresponsivity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-responsivity photodetectors based on moisture-resistant organic-inorganic hybrid perovskite materials
  • High-responsivity photodetectors based on moisture-resistant organic-inorganic hybrid perovskite materials
  • High-responsivity photodetectors based on moisture-resistant organic-inorganic hybrid perovskite materials

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] The glass substrate was ultrasonically washed with detergent, isopropanol, ethanol, and acetone for 5 minutes, then rinsed with deionized water and dried. A layer of metal aluminum with a thickness of 10nm was spin-coated on the glass substrate. After UV-ozone treatment, a PEDOT:PSS electron barrier layer with a thickness of about 40nm was prepared by the spin coating method, and baked at 120°C for 15 minutes and then taken out . Mix and dissolve methyl iodide, n-butylamine hydroiodide, lead iodide, and ammonium thiocyanate in N,N-dimethylformamide, lead iodide and N,N-dimethylformamide The mixing ratio is 50 mg: 1 ml, methyl amine iodide: n-butylamine hydroiodide: lead iodide: ammonium thiocyanate (molar ratio) is 2:2:3:0.005, stirred overnight to obtain the precursor Body solution; using the solution spin coating method, take the precursor solution and spin-coat on the PEDOT:PSS layer to form a film at a rotation speed of 2000 revolutions per minute, a rotation time o...

Embodiment 2

[0020] The quartz substrate was ultrasonically washed with detergent, isopropanol, ethanol, and acetone for 5 minutes, then rinsed with deionized water and dried. A layer of 20nm thick metallic silver was vacuum-evaporated on the quartz substrate. After UV-ozone treatment, a PEDOT:PSS electron barrier layer with a thickness of about 40nm was prepared by a spin coating method, and it was baked at 120°C for 15 minutes and then taken out. Mix and dissolve methyl iodide, n-butylamine hydroiodide, lead iodide, and ammonium thiocyanate in N,N-dimethylformamide, lead iodide and N,N-dimethylformamide The ratio of the mixture is 800 mg: 1 ml, methyl amine iodide: n-butylamine hydroiodide: lead iodide: ammonium thiocyanate (molar ratio) is 2:2:3:1.5, stirred overnight to obtain the precursor Body solution; using the solution spin coating method, take the precursor solution and spin-coated on the PEDOT:PSS layer to form a film at a rotation speed of 8000 rpm, a rotation time of 60 seconds...

Embodiment 3

[0022] The quartz substrate was ultrasonically washed with detergent, isopropanol, ethanol, and acetone for 5 minutes, then rinsed with deionized water and dried. A layer of 25nm thick metal gold was vacuum-evaporated on the quartz substrate, and after UV-ozone treatment, a CuOx electron blocking layer with a thickness of about 40nm was prepared by a spin coating method, and it was baked at 150°C for 15 minutes and then taken out. Mix and dissolve methyl iodide, n-butylamine hydroiodide, lead iodide, and ammonium thiocyanate in N,N-dimethylformamide, lead iodide and N,N-dimethylformamide The ratio is 500 mg: 1 ml, methyl amine iodide: n-butylamine hydroiodide: lead iodide: ammonium thiocyanate (molar ratio) is 2:2:3:1, stirred overnight to obtain the precursor Body solution; using the solution spin coating method, take the precursor solution to spin coating on the CuOx layer to form a film at a rotation speed of 5000 rpm, a rotation time of 30 seconds, and an annealing at 100°C...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a high-responsivity photodetector based on a moisture-resistant organic-inorganic hybrid perovskite material. It includes a substrate, a transparent electrode layer, an electron blocking layer, an active layer, a hole blocking layer, and a metal electrode layer; The electrode layer; the active layer is an organic-inorganic hybrid perovskite material, which is characterized in that on the one hand, it adopts the method of introducing a second amine source into the three-dimensional organic-inorganic hybrid perovskite material to improve its moisture resistance On the other hand, in the preparation process of the thin film material of the active layer, the orientation direction of its crystal growth is controlled, and the carrier transport capacity of the active layer is improved, so as to achieve the purpose of improving the responsivity of the detector at the same time.

Description

Technical field [0001] The invention relates to a high-response photodetector based on moisture-resistant organic-inorganic hybrid perovskite material. [0002] technical background [0003] Organic-inorganic hybrid perovskite materials have excellent photoelectric properties such as strong absorption of inorganic semiconductor materials, high mobility, long carrier life, adjustable band gap, etc., as well as good large-area solution processability of organic substances. The field of photoelectric conversion has attracted much attention. At present, the efficiency of three-dimensional perovskite solar cells based on lead iodide has exceeded 22%, and photodetectors based on this type of material have also received increasing attention. However, the stability of the three-dimensional hybrid perovskite film material in a humid environment has hindered the further practical application of this type of material. [0004] From a material perspective, the introduction of a second amine so...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/44
CPCH10K30/00H10K30/80Y02E10/549
Inventor 吴刚陈红征汪茫
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap