Highly filled infrared detector pixel structure and its preparation method

Abstract

The present invention provides a highly filling infrared detector pixel structure and a manufacture method thereof. A conductive beam structure is formed on a silicon substrate and an infrared detection structure is formed on the conduction beam structure; the bottom of each layer of conductive groove is contacted with the top of a below adjacent layer of conductive groove and is connected to two ends of one conductive beam; the bottom of one layer of conductive groove is contacted with a conductive metal area; the topmost layer of the conductive beam structure has a top layer of conductive groove and a top layer of conductive beam; the top layer of conductive beam is contacted and connected with the infrared detection structure, so that a micro-bridge structure is above the conductive beam structure; each layer of conductive groove and conductive beam form a roundabout step structure, so that a transmission path of an electronic signal generated by the micro-bridge structure takes on a roundabout step shape; and the electric signal generated by the micro-bridge structure is transmitted to the top of the top layer of conductive groove from the top layer of conductive beam, and then is transmitted to the bottom of the top layer of conductive groove, and finally is transmitted to the conducive metal area after being transmitted among multiple layers of conductive groove and conductive beam.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a highly filled infrared detector pixel structure and a preparation method thereof. Background technique [0002] The infrared detector is a device that converts the incident infrared radiation signal into an electrical signal output. It uses a thermal element to detect the existence or movement of an object. The infrared radiation outside the detector mobile phone is then gathered on the infrared sensor. The infrared sensor uses a thermal element , the thermal element will output a signal when it receives a change in the temperature of the infrared radiation, convert it into an electrical signal, and then analyze the waveform of the electrical signal. Only one type of thermistor is used in the pixel structure of traditional infrared detectors, usually amorphous silicon or vanadium oxide with negative temperature coefficient, and the changing signal is amplified and output...

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Problems solved by technology

[0003] However, the sensitivity of the detector structure using thermal elements is usually not very high, and the structure is relatively complicated, and the detection process is complicated. If a thermal sensor with high sensitivity is used, the material cost is expensive;

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