Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Growing method of gallium selenide two-dimensional material monocrystal block material

A technology of two-dimensional materials and growth methods, which is applied in the field of growth of gallium selenide two-dimensional material single crystal bulk materials, can solve the problems of difficult growth of gallium selenide two-dimensional material single crystal crystals, and achieve less defects and high cleavage High, high-purity effect

Inactive Publication Date: 2016-09-07
南京安京太赫光电技术有限公司
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is very difficult to grow single crystals of gallium selenide two-dimensional materials. Dimensional material single crystal bulk material has high scientific research value

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0008] 1. Weigh 0.469g of powdered gallium and 0.542g of excess 2% powdered selenium, pour them into a section of quartz tube with an inner diameter of 13mm and a length of about 15cm, and seal both ends.

[0009] 2. Place the sealed quartz tube in a box furnace, raise the temperature to 300 degrees Celsius for 1 hour, then raise the temperature to 1000 degrees Celsius for another 6 hours, and maintain the temperature in the box furnace at 1000 degrees Celsius. .

[0010] 3. Take out the quartz tube containing the gallium selenide polycrystalline sample, put it into a vertically placed three-temperature zone furnace, set the upper part of the furnace body as a high temperature zone of 990°C, the middle temperature zone as a medium temperature zone of 965°C, and the lower part as a low temperature zone of 940°C ℃, put the polycrystalline end flush with the thermocouple in the high temperature zone, and turn on the three-temperature zone furnace for 12 hours to raise the temp...

Embodiment 2

[0015] 1. Weigh 0.469g of powdered gallium and 0.552g of excess 4% powdered selenium, pour them into a section of quartz tube with an inner diameter of 13mm and a length of about 20cm, and seal both ends.

[0016] 2. Place the sealed quartz tube in a box-type furnace, raise the temperature to 250 degrees Celsius for 1 hour, then raise the temperature to 980 degrees Celsius for 6 hours, and maintain the temperature in the box-type furnace at 980 degrees Celsius. .

[0017] 3. Take out the quartz tube containing the gallium selenide polycrystalline sample, put it into a vertically placed three-temperature zone furnace, set the upper part of the furnace body as a high temperature zone of 970°C, the middle temperature zone as a medium temperature zone of 960°C, and the lower part as a low temperature zone of 950°C ℃, put the polycrystalline end flush with the thermocouple in the high temperature zone, and turn on the three-temperature zone furnace for 12 hours to raise the temp...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a growing method of a gallium selenide two-dimensional material monocrystal block material. Pure selenium powder and pure gallium powder are used as raw materials and take a chemical reaction at high temperature to obtain a polycrystal gallium selenide material. Polycrystal gallium polycrystals are put into a three-temperature-zone furnace to grow polycrystal gallium crystals by a bridgman method; then, the cutting is performed along a polycrystal gallium natural cleavage layer to obtain the gallium selenide two-dimensional material monocrystal block material.

Description

technical field [0001] The invention relates to a method for growing a gallium selenide two-dimensional material single crystal block. Background technique [0002] Gallium selenide (GaSe) is a kind of dark brown flashing flaky crystal. As an important member of the two-dimensional atomic crystal material family, gallium selenide has a structure and properties different from traditional two-dimensional materials: gallium selenide and gallium sulfide The same is a layered structure semiconductor, and as the temperature decreases, the maximum photoelectric effect of gallium selenide moves to the short-wave direction. The light transmission band of gallium selenide crystal is 0.62-20um, and the absorption rate in this band is extremely low, so it is a kind of excellent performance suitable for infrared nonlinear optical crystal, which can realize infrared, far infrared and even terahertz band frequency conversion. However, it is very difficult to grow single crystals of galli...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B11/02C30B29/60
CPCC30B11/02C30B29/60
Inventor 邱俊
Owner 南京安京太赫光电技术有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com