Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for detecting method film via spectroscopic ellipsometer

A spectroscopic ellipsometer and metal film technology, which is applied in the field of optical measurement, can solve problems such as difficult measurement and fitting, and achieve the effects of improving accuracy and sensitivity, stable and reliable measurement results, and a wide range of applications.

Active Publication Date: 2016-06-15
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
View PDF6 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the problem in the prior art that it is difficult to measure and fit a metal film with a thickness exceeding 50nm using a spectroscopic ellipsometer, the present invention provides a method for detecting a metal film using a spectroscopic ellipsometer. The detection accuracy and sensitivity of thick metal films are simple and feasible, and can be applied to the ellipsometer measurement of various ultra-thick metal films and the fitting of thickness and optical constants

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for detecting method film via spectroscopic ellipsometer
  • Method for detecting method film via spectroscopic ellipsometer
  • Method for detecting method film via spectroscopic ellipsometer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] In this example, Al-SiO 2 -Si substrate film system as an example, using spectroscopic ellipsometer to detect the metal film, the specific method is as follows:

[0052] (1) Preparation of SiO 2 -Si substrate film system: SiO with three different thicknesses of 1μm, 2μm and 5μm were prepared on the Si substrate by chemical vapor deposition 2 membrane;

[0053] (2) Spectroscopic ellipsometer for SiO 2 -Si substrate film system for measurement and fitting: during the measurement process, the incident light wavelength is 190-2500nm, and the incident angle is 70°; the SiO 2 -Si substrate film system model, the SiO measured by spectroscopic ellipsometer 2 -The experimental value of the ellipsometric parameters of the Si substrate film system and the SiO 2 -Fit the theoretical value given by the Si substrate film system model, and read out the SiO 2 film thickness and optical constants, and use them as SiO 2 known parameters of the membrane;

[0054] (3) Preparation o...

Embodiment 2

[0071] In this example, Au-SiO 2 -Si substrate film system as an example, using spectroscopic ellipsometer to detect the metal film, the specific method is as follows:

[0072] (1) Preparation of SiO 2 -Si substrate film system: two different thicknesses of SiO, 2μm and 5μm, were prepared on Si substrate by chemical vapor deposition 2 membrane;

[0073] (2) Spectroscopic ellipsometer for SiO 2 -Si substrate film system for measurement and fitting: during the measurement process, the incident light wavelength is 190-2500nm, and the incident angle is 70°; the SiO 2 -Si substrate film system model, the SiO measured by spectroscopic ellipsometer 2 -The experimental value of the ellipsometric parameters of the Si substrate film system and the SiO 2 -Fit the theoretical value given by the Si substrate film system model, and read out the SiO 2 film thickness and optical constants, and use them as SiO 2 known parameters of the membrane;

[0074] (3) Preparation of Au-SiO 2 -S...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
angle of incidenceaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a method for detecting a metal film via a spectroscopic ellipsometer. The method comprises the following steps that a non-absorptive medium-Si substrate system is prepared; the spectroscopic ellipsometer is used to measure and fit the non-absorptive medium-Si substrate system; metal films of the same thickness are prepared on the non-absorptive medium-Si substrate system and a glass substrate in the same method respectively, and a metal and non-absorptive medium-Si substrate film system and a metal and glass film system are obtained; and the spectroscopic ellipsometer is used to carry out measurement and segmented fitting on the metal and non-absorptive medium-Si substrate film system to obtain needed data. According to the method, the detection precision and sensitivity of the super-thick metal film are greatly improved, the thickness range, which can be measured, of the metal film is expanded, the detection method is simple and convenient, a detection result is stable and reliable, and the application range is wide.

Description

technical field [0001] The invention belongs to the field of optical measurement, and relates to a method for detecting a metal film by using a spectroscopic ellipsometer, in particular to a method for improving the detection accuracy and sensitivity of the metal film by using a spectroscopic ellipsometer. Background technique [0002] Ellipsometry is a technique for measuring film thickness and film optical constants by measuring the changes in light intensity and phase of probe light before and after reflection on the sample surface. Ellipsometry is an indirect measurement, so the measurement results are not intuitive information about film thickness and optical constants, but ellipsometric angles / parameters. Therefore, it is necessary to model and analyze the data of ellipsometric parameters to obtain the thickness and optical constants of the desired film. At the same time, spectral ellipsometry has become an important technical means in the field of thin film research ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01B11/06G01N21/21
CPCG01B11/06G01N21/211G01N2021/213
Inventor 田毅张先锋闫兰琴宋志伟褚卫国
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com