P‑i‑n heterojunction optoelectronic devices based on two-dimensional layer materials
A heterojunction, p-i-n technology, applied in electrical components, semiconductor devices, circuits, etc., can solve the problems of long detection band and low temperature, achieve high signal-to-noise ratio, high avalanche gain, and reduce dark current.
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[0031] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention. The source electrode layer and the drain electrode layer are respectively arranged on the two semiconductor layers; the top gate electrode is arranged on the top gate dielectric layer.
[0032] The p-i-n heterojunction device includes a back gate and a top gate structure, the back gate is used to adjust the carrier concentration of the bottom semiconductor; the top gate electrode is used to adjust the carrier concentration of the top semiconductor material. The ...
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