Copper interconnection structure, manufacturing method thereof, and electronic device
A technology of copper interconnect structure and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of dish-shaped defects in metal areas, erosion of copper metal, and erosion of dielectric areas, and achieves less damage and reduction. The effect of height change
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Embodiment 1
[0027] Below, refer to Figure 2a-Figure 2e with image 3 The detailed steps of the manufacturing method of the copper interconnection structure proposed by the present invention will be described. Figure 2a-2e A schematic cross-sectional view of a semiconductor device obtained in key steps of a method for manufacturing a copper interconnection structure according to an embodiment of the present invention is shown.
[0028] First, refer to Figure 2a , in step a), a semiconductor substrate 201 is provided. The constituent material of the semiconductor substrate 201 may be undoped single crystal silicon, single crystal silicon doped with impurities, silicon-on-insulator (SOI) or the like. Isolation trenches, buried layers, various well structures or lower interconnection structures may be formed in the semiconductor substrate 201 , which are omitted in the illustration for simplicity.
[0029] continue to refer Figure 2a , in step b), an interlayer dielectric layer 202 ,...
Embodiment 2
[0044] The present invention also provides a copper interconnection structure, which is manufactured by the method described in the above-mentioned embodiments. According to the copper interconnection structure provided by the present invention, the CMP process is replaced by an etch-back process, which can reduce the height change of the copper interconnection line on the semiconductor product caused by the CMP process, and the damage to the interlayer dielectric layer caused by moisture absorption Also smaller.
Embodiment 3
[0046] The present invention also provides an electronic device, including the copper interconnection structure described in the second embodiment. Wherein, the copper interconnection structure is the copper interconnection structure described in the second embodiment, or the copper interconnection structure obtained according to the manufacturing method described in the first embodiment.
[0047] The electronic device of this embodiment can be any electronic product or equipment such as mobile phone, tablet computer, notebook computer, netbook, game console, TV set, VCD, DVD, navigator, camera, video recorder, voice recorder, MP3, MP4, PSP, etc. , can also be any intermediate product including the copper interconnection structure. The electronic device of the embodiment of the present invention has better performance due to the above-mentioned copper interconnection structure.
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