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A method for testing the emission wavelength of Gaas-based semiconductor laser epitaxial wafers and its application

A light-emitting wavelength, semiconductor technology, applied in the direction of measuring optics, instruments, measuring devices, etc., can solve the problems of not being able to make devices, destroying the surface contact layer of epitaxial wafers, etc.

Active Publication Date: 2018-04-13
Shandong Huaguang Optoelectronics Co. Ltd.
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the luminous wavelength of the epitaxial wafer can be tested, the surface contact layer of the epitaxial wafer is destroyed, and it cannot be made into a device, such as figure 2 shown

Method used

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  • A method for testing the emission wavelength of Gaas-based semiconductor laser epitaxial wafers and its application
  • A method for testing the emission wavelength of Gaas-based semiconductor laser epitaxial wafers and its application
  • A method for testing the emission wavelength of Gaas-based semiconductor laser epitaxial wafers and its application

Examples

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Embodiment 1

[0043] A method for testing the emission wavelength of a GaAs-based semiconductor laser epitaxial wafer, the GaAs-based semiconductor laser epitaxial wafer includes a substrate 1, a lower cladding layer 2, an active region 3, an upper cladding layer 4, and a contact layer arranged in sequence from bottom to top 5. The substrate 1 is a GaAs single wafer suitable for epitaxial growth, and the lower cladding layer 2 and the upper cladding layer 4 are both Al 0.5 Ga 0.5 As, the active region 3 is a light-emitting region, the contact layer 5 is heavily doped GaAs, the light-emitting wavelength of the GaAs-based semiconductor laser epitaxial wafer is located near 800nm, the structure and light of the GaAs-based semiconductor laser epitaxial wafer of the present invention The output diagram is as figure 1 As shown, the specific steps include:

[0044] (1) grow a layer of dielectric film 11 that does not absorb the light emitted by the active region 3 on the surface of the GaAs-base...

Embodiment 2

[0050] A method for testing the emission wavelength of a GaAs-based semiconductor laser epitaxial wafer, the GaAs-based semiconductor laser epitaxial wafer includes a substrate 1, a lower cladding layer 2, an active region 3, an upper cladding layer 4, and a contact layer arranged in sequence from bottom to top 5. The substrate 1 is a GaAs single wafer suitable for epitaxial growth, and the lower cladding layer 2 and the upper cladding layer 4 are both Al 0.5 In 0.5 P, the active region 3 is a light-emitting region, the contact layer 5 is heavily doped GaAs, the light emission wavelength of the GaAs-based semiconductor laser epitaxial wafer is located near 660nm, the structure and light of the GaAs-based semiconductor laser epitaxial wafer of the present invention The output diagram is as figure 1 As shown, the specific steps include:

[0051] (1) grow a layer of dielectric film 11 that does not absorb the light emitted by the active region 3 on the surface of the GaAs-based...

Embodiment 3

[0057] A GaAs-based semiconductor laser epitaxial wafer for testing the emission wavelength, the GaAs-based semiconductor laser epitaxial wafer includes a substrate 1, a lower cladding layer 2, an active region 3, an upper cladding layer 4, and a contact layer arranged in sequence from bottom to top. Layer 5, the substrate 1 is a GaAs single wafer suitable for epitaxial growth, the lower cladding layer 2 and the upper cladding layer 4 are both Al 0.5 Ga 0.5 As, the active region 3 is a light-emitting region, the contact layer 5 is heavily doped GaAs, the light-emitting wavelength of the GaAs-based semiconductor laser epitaxial wafer is located near 800nm, and the surface of the contact layer 5 is provided with a layer of non-absorbing active region 3 the dielectric film 11 of the emitted light, the value of the refractive index m of the dielectric film 11 is 1.45; the refractive index of the light emitted by the GaAs-based semiconductor laser epitaxial wafer in GaAs is 3.68, a...

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Abstract

The invention relates to a method for measuring GaAs-based semiconductor laser epitaxial wafer light-emitting wavelength and application thereof. A GaAs-based semiconductor laser epitaxial wafer comprises a substrate, a lower wrapping layer, an active region, an upper wrapping layer and a contact layer from the bottom up in sequence. The method has the following specific steps: 1) growing a layer of dielectric film, non-absorbing the light emitted by the active region, on the surface of the GaAs-based semiconductor laser epitaxial wafer, wherein refractive index m of the dielectric film is larger than 1 and smaller than n, n being refractive index of the light, emitted by the GaAs-based semiconductor laser epitaxial wafer, in the GaAs, and the thickness d of the dielectric film is larger than 0 and equal to or smaller than lambda / 2m, lambda being the wavelength of the light emitted by the GaAs-based semiconductor laser epitaxial wafer, and the surface of the dielectric film is rough; 2) carrying out routine photoluminescence test; and 3) removing the dielectric film. According to the method, the probability of total reflection when the light emitted by the GaAs-based semiconductor laser epitaxial wafer is incident to the air is greatly reduced, and the number of light rays escaping out of the epitaxial wafer is increased.

Description

technical field [0001] The invention relates to a method for testing the emission wavelength of GaAs-based semiconductor laser epitaxial wafers and an application thereof, belonging to the technical field of semiconductor laser testing. Background technique [0002] Semiconductor lasers have the advantages of small size, long life, high photoelectric conversion efficiency, and easy compatibility with integrated circuits. They are widely used in optical communications, optical storage, industrial manufacturing, and medical care. Among them, GaAs-based semiconductor lasers are the earliest researched, best-performing and most widely used. [0003] The operating wavelength of a semiconductor laser is determined by the semiconductor material used to make the device. There are conduction band and valence band in the semiconductor material. The conduction band contains free-moving electrons, while the valence band contains freely-moving holes. There is a forbidden band between th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01J9/00
CPCG01J9/00
Inventor 朱振张新徐现刚
Owner Shandong Huaguang Optoelectronics Co. Ltd.
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