Semiconductor device and manufacturing method thereof

Abstract

The present invention provides a semiconductor device, comprising: a first device region and a second device region; wherein, the first device region comprises: a substrate having a first semiconductor material; a second semiconductor layer located on the substrate above; the third semiconductor layer, located on the second semiconductor layer, is the first device formation region; the first isolation structure, located on both sides of the third semiconductor layer and on the substrate; the first insulating layer, located on the third semiconductor layer Under the source and drain regions of the layer, between the first isolation structure and the end of the second semiconductor layer; the second device region includes: the substrate; the second device on the substrate; the second isolation structure, located on both sides of the second device side substrate. The device of the invention has the characteristics of low cost, small leakage, low power consumption, high speed, relatively simple process and high integration.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] With the continuous shrinking of device size, the number of devices on a chip per unit area is increasing, which will lead to an increase in dynamic power consumption. At the same time, the continuous shrinking of device size will inevitably lead to an increase in leakage current, which in turn will cause an increase in static power consumption. , and with the high integration of semiconductor devices, the channel length of MOSFET continues to shorten, and a series of effects that can be ignored in the MOSFET long channel model become more and more significant, and even become the dominant factor affecting the performance of the device. This phenomenon is collectively referred to as short channel effect. The short channel effect will deteriorate the electrical performance of the device, ...

AI Technical Summary

Problems solved by technology

However, the cost of the SOI substrate is high, and a larger device area is required to avoid the floating body effect (Floating Body Effect), which is difficult to meet the requirements of high integration of the device. In addition, due to the embedding of the silicon dioxide layer, the heat dissipation of the device Performance suffers

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