Improved structure of single crystal furnace for growing large-size sapphire

Abstract

The invention provides an improved structure of a single crystal furnace for growing large-size sapphire. The improved structure comprises an upper thermal insulation structure, side thermal insulation structures and a bottom thermal insulation structure, wherein the upper thermal insulation structure and the bottom thermal insulation structure are identical to those in patents of the earlier stage; the difference resides in that the thicknesses of the thermal insulation layers are gradually reduced from top to bottom instead of identical thicknesses of upper and lower structures of the side thermal insulation structures, the diameter of a birdcage-like heating body is gradually reduced from top to bottom, and the heating body is in a shape of an inverted cone. The thermal field is uniform and reasonable, the crystal growth rate is stable, defects that crystals generates clouds, are glued on pots and the like can be effectively reduced, the dependence on a process control worker is low, and the crystal growth yield is high.

Description

(1) Technical field [0001] The invention relates to an improved structure of a single crystal furnace for growing large-size sapphire, in particular to an improved structure of a single crystal furnace for growing large-size sapphire by the Kyropoulos method. (2) Background technology [0002] Sapphire single crystal has excellent mechanical, thermal, optical and other properties, and is widely used in many fields of science and technology, national defense and civil industry, and semiconductor industry. It is currently the preferred material for blue-light GaN epitaxial substrates in the LED market. With the continuous progress of sapphire single crystal growth and processing technology, the development of the industry is becoming more and more mature, and the comprehensive advantages of sapphire products in terms of cost and performance are becoming more and more prominent. Therefore, sapphire has a good role in consumer electronics and other consumer products. Application...

AI Technical Summary

Problems solved by technology

It avoids the instability of growth rate in the early stage of crystal growth and the formation of bubbles, cracks and other defects caused by excessive crystal growth rate in the later stage, and improves the yield of large-size sapphire single crystal crystal growth. The improved structure of the single crystal furnace for growing large-size sapphire

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