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Etching reaction equipment and its throttle valve

A technology of reaction equipment and throttle valve, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of unstable cavity pressure, bearing damage, poor operation of the transmission mechanism, etc., to avoid particle pollution, reliable The effect of increasing the degree of

Active Publication Date: 2018-03-09
WINBOND ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The throttling opening design of the pendulum valve will damage the bearing due to the leverage effect of the airflow pressure, resulting in poor operation of the transmission mechanism and directly affecting the instability of the cavity pressure

Method used

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  • Etching reaction equipment and its throttle valve
  • Etching reaction equipment and its throttle valve
  • Etching reaction equipment and its throttle valve

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Embodiment Construction

[0028] refer to figure 1 , which shows the etching reaction equipment 1 of the embodiment of the present invention, which is used to etch a wafer 9, including a cavity reaction chamber 11, a crystal seat (lower electrode) 12, a reaction gas inlet 13, and an upper electrode 14 , air pump 15, radio frequency generator 16, pressure sensor 17 and throttle valve 100. The wafer 9 is placed on the crystal base (bottom electrode) 12 via the transfer arm. The reaction gas inlet 13 is arranged on the top of the reaction chamber 11 of the chamber, and the etching gas is injected into the chamber from above through the upper electrode 14 .

[0029] The pressure sensor 17 senses the pressure of the reaction gas in the cavity reaction chamber 11, and provides a pressure sensing value, and the etching reaction equipment 1 controls the air pump 15 and the section according to the pressure sensing value. The action of the flow valve 100 is used to adjust the pressure of the reaction gas in t...

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PUM

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Abstract

An etching reaction device and its throttle valve include a first substrate, a second substrate and a plurality of blades. The first substrate includes a plurality of pivot structures, wherein a first opening is formed on the first substrate. The second substrate includes a plurality of turning structures, wherein a second opening is formed on the second substrate. Each blade includes a pivot portion and a connection portion, the pivot portion is connected to one of the pivot structures, and the connection portion is connected to one of the steering structures. Through the relative rotation between the first base plate and the second base plate, the blade rotates between a first orientation and a second orientation. When the blade is in the first orientation, the blades jointly define a blade opening, and the blade opening corresponds to the first opening. And the second opening, when the blade is in the second orientation, the blade opening is closed. The throttling valve of the present invention does not use a belt, thus avoiding particle pollution, and the throttling valve does not produce a lever effect due to air pressure, so the reliability of the throttling valve is effectively improved.

Description

technical field [0001] The present invention relates to a throttle valve, in particular to an etching reaction equipment (Etching equipment) and a throttle valve applied to etching reaction equipment. Background technique [0002] The dry etching machine in the semiconductor process is mainly used in the definition of components and wire layers (pattern transfer). The etching principle is to use plasma to ionize the etching gas, and then chemically react with the material or add physical Impact, with isotropic or anisotropic features. Etch performance (etch performance index) evaluation items include (1) etch rate, (2) uniformity, (3) selectivity ratio, (4) profile (profile), and the stability of chamber pressure (chamber pressure) is the influence An important factor of etching performance. [0003] The existing way of servoing and maintaining the pressure of dry etching machines is to inject etching gas into the cavity, and to servo and maintain the pressure required by ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/306B05C11/00
Inventor 何信春
Owner WINBOND ELECTRONICS CORP
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