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A method of manufacturing a semiconductor device

A semiconductor and device technology, which is applied in the field of manufacturing embedded flash memory floating gate, can solve the problem of etching process damage to the active area, and achieve the effect of improving performance

Active Publication Date: 2017-10-20
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, during the CMP process, as the size of the active region increases, the recess phenomenon becomes more and more serious, and the recess will be transferred to the floating gate polysilicon layer after CMP, causing damage to the active region by the subsequent etching process.

Method used

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  • A method of manufacturing a semiconductor device
  • A method of manufacturing a semiconductor device
  • A method of manufacturing a semiconductor device

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Embodiment Construction

[0022] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

[0023] In order to thoroughly understand the present invention, detailed steps will be presented in the following description to illustrate how the present invention solves the problems in the prior art. Apparently, the preferred embodiments of the present invention are described in detail as follows, however, the present invention may also have other implementations apart from these detailed descriptions.

[0024] It should be noted that the terms used herein are for the purpose of describing specific embodiments only, and are not intended to limit exemplary e...

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Abstract

The present invention proposes a method for manufacturing a semiconductor device, comprising: providing a semiconductor substrate; sequentially forming a gate oxide layer and a floating gate polysilicon layer on the semiconductor substrate; forming a large-sized floating gate buffer oxide layer; dividing the large-sized floating gate buffer oxide layer into a plurality of small-sized floating gate buffer oxide layers of the same size; performing chemical mechanical polishing. The method of the present invention provides a relaxed window for subsequent processes by optimizing the pattern of the floating gate buffer oxide layer formed on the floating gate polysilicon layer located in the large-area active region after the FGBF photolithography process, to solve the problem of the floating gate polysilicon layer After CMP, recesses are formed in the floating gate polysilicon layer located in the large-area active region, so as to improve the overall performance of the embedded flash memory and the yield rate of the embedded flash memory.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a method for manufacturing an embedded flash memory floating gate. Background technique [0002] Memory is used to store a large amount of digital information. According to recent surveys, memory chips account for about 30% of semiconductor transactions worldwide. Over the years, technological progress and market demand have led to more and more high-density various Types of memory, such as RAM (random access memory), SRAM (static random access memory), DRAM (dynamic random access memory) and FRAM (ferroelectric memory), etc. [0003] Random access memory, such as DRAM and SRAM, has the problem of data loss after power failure during use. To overcome this problem, various nonvolatile memories have been designed and developed. Recently, flash memory based on the floating gate concept has become the most versatile non-volatile memory due to its small cell size and good per...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28
CPCH01L29/40114H10B41/00
Inventor 任红茹何学缅
Owner SEMICON MFG INT (SHANGHAI) CORP
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