A fixture and preparation method for large-scale preparation of graphene film

Abstract

The invention relates to a fixture for large-scale preparation of graphene films and a preparation method. The fixture comprises an upper grid rack and a lower grid rack, wherein the upper grid rack comprises an upper grid rack semicircular fixing frame and multiple vertically-arranged upper grid plates fixed on the inner circle surface of the upper grid rack semicircular fixing frame; an upper grid plate gap is reserved between adjacent upper grid plates; the lower grid rack comprises a lower grid rack semicircular fixing frame and multiple vertically-arranged lower grid plates fixed below the inner circle surface of the lower grid rack semicircular fixing frame; a lower grid plate gap is reserved between adjacent lower grid plates; the upper grid plates are inserted into the lower grid plate gaps; the lower grid plates are inserted into the upper grid plate gaps; and the upper grid rack semicircular fixing frame is abutted with the lower grid rack semicircular fixing frame. In the invention, the growing space of the graphene films is fully utilized, the number of graphene films growing every single time is increased, large-scale preparation is realized, and the production cost of graphene films is remarkably reduced.

Description

technical field [0001] The invention relates to the technical field of graphene growth and preparation, in particular to a fixture and a preparation method for large-scale preparation of graphene films. Background technique [0002] Graphene is a two-dimensional new material with the thickness of a single carbon atom layer. It has excellent properties in mechanics, heat, optics, and electricity, such as ultra-high mechanical strength, good thermal conductivity, wide-spectrum high Strong electrical conductivity etc. The unique physical properties of graphene determine its broad application prospects, which has triggered a research boom in international academic and industrial circles. If it is applied to flexible transparent electrodes, the device will have stronger light transmittance, better conductivity, and lower power consumption. It is expected to replace the current market-leading ITO transparent electrodes and be widely used in optoelectronic devices such as flexible...

AI Technical Summary

Problems solved by technology

However, there has been no breakthrough in the rapid and large-scale preparation of large-area, high-quality graphene, which greatly limits the efficiency and output of graphene preparation and hinders its further industrial development.

Because the preparation of high-quality graphene by CVD usually needs to be carried out at the melting point of the graphene growth substrate (about 1000 degrees), the metal growth substrates will adhere to each other at this high temperature, which limits the single-time preparation of graphene. quantity

Although South Korea's Sungkyunkwan University can prepare a graphene film with a diagonal of 15 inches at a time, it uses a tube furnace with a diameter of 8 inches and covers the inner wall of the entire furnace tube with the graphene growth substrate, leaving the rest of the growth space It has not been rationally utilized, not only the number of single-growth batches prepared is small, but also causes waste of resources

Recently, Japan’s Sony has achieved roll-to-roll growth of graphene by heating the growth substrate with electrodes. However, due to local heating and low temperature, the quality of the prepared graphene is poor and cannot meet the application requirements.

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