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Method for improving utilization rate of rectangular planar magnetron sputtering cathode target material

A magnetron sputtering and cathode target technology, which is applied in sputtering coating, metal material coating process, ion implantation plating, etc., can solve the problem of low utilization rate of target materials, and achieve the goal of improving utilization rate and reducing cost Effect

Inactive Publication Date: 2014-05-28
CHINA TRIUMPH INT ENG
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Problems solved by technology

[0005] The purpose of the present invention is to provide a method for improving the utilization rate of the rectangular planar magnetron sputtering cathode target which can effectively solve the problem that the target utilization rate of the rectangular planar cathode is very low.

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  • Method for improving utilization rate of rectangular planar magnetron sputtering cathode target material

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Embodiment 1

[0019] Such as figure 1 As shown, the rectangular planar magnetron sputtering cathode of a method for improving the utilization rate of the rectangular planar magnetron sputtering cathode includes a middle target bead 1, a middle bead 2, a side target bead 3, an edge bead 4, and a back plate 5. Cooling plate 6, cathode seat 7, support block 8, magnetic yoke 9, center column 10, middle magnet 11, middle magnetic shoe 12, side magnet 13, side magnetic shoe 14 and target 15, characterized in that the target passes through Two installations, two sputtering, the specific method is: when the target is installed for the first time, after sputtering, the etching area is located on one side of the target; then the target is rotated 180° horizontally and then reinstalled on the cathode , the second sputtering is performed, and the two etching areas are just connected to form a larger etching area, which improves the utilization rate of the target.

[0020] The cathode seat of the recta...

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Abstract

The invention relates to the technical field of magnetron sputter coating production equipment, in particular to a method for improving the utilization rate of a rectangular planar magnetron sputtering cathode target material. The target material is characterized by being mounted twice and sputtered twice. The method comprises the following specific steps: during mounting of the target material for the first time, sputtering the target material, wherein an etching area is positioned on one side of the target material; then horizontally rotating the target material for 180 degrees, re-mounting the target material on a cathode, and sputtering the target material for the second time, wherein the etching areas for two-time sputtering are exactly connected to form a larger etching area. Compared with the prior art, the method has the advantages that after being mounted for the first time, the target material is sputtered, and the etching area is positioned on one side of the target material; then the target material is horizontally rotated for 180 degrees, is re-mounted on the cathode, and is sputtered for the second time, so that the etching areas for the two-time sputtering are exactly connected to form the larger etching area; in addition, shielding covers of which the section is L-shaped are arranged on two sides of the outer part of a cathode seat to shield more than 50 percent of the area on the target material, so that the utilization rate of the target material is improved, and the cost is reduced.

Description

[technical field] [0001] The invention relates to the technical field of magnetron sputtering coating production equipment, in particular to a method for improving the utilization rate of rectangular planar magnetron sputtering cathode targets. [Background technique] [0002] Magnetron sputtering is to perform high-speed sputtering under low pressure. It is necessary to effectively increase the ionization rate of the gas. By introducing a magnetic field on the surface of the target cathode, the plasma density is increased by using the magnetic field to confine the charged particles to increase the sputtering rate. Methods. Because magnetron sputtering can deposit any coating film on any substrate, magnetron sputtering has become the mainstream of sputtering technology and is widely used in large-area coating production. [0003] Magnetron sputtering coating is a technology that uses energetic particles to bombard the target surface in a vacuum, so that the bombarded particl...

Claims

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Application Information

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IPC IPC(8): C23C14/35
Inventor 彭寿葛承全张超群井治张仰平李险峰
Owner CHINA TRIUMPH INT ENG
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